Doc No. TT4-EA-13635
Revision. 3
Product Standards
MOS FET
FC8V22040L
FC8V22040L
Gate Resistor installed Dual N-Channel MOS Type
Unit: mm
2.9
For lithium-ion secondary battery protection circuit
0.3 0.16
8 7 6 5
Features
Low drain-source On-state Resistance:
RDS(on)typ. = 10.5 m VGS = 4.5 V)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1 234
(0.81)
0.65
.1 Source .2 Drain
Marking Symbol: 4C 1. 5.
2. .1 Gate 6. .2 Drain
.2 Source .1 Drain
3. 7.
Basic Part Number : Dual Nch MOS 24V (Drain Common type) 4. .2 Gate 8. .1 Drain
Panasonic WMini8-F1
Packaging JEITA SC-115
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) Code
Internal Connection
Absolute Maximum Ratings Ta = 25 C Tr.1,Tr.2 8 7 6 5
Parameter Symbol Rating Unit
Drain-source Voltage VDS 24 V
Gate-source Voltage 12 V
FET1 VGS
FET 1 FET 2
Rg Rg
FET2 Drain Current ID 8 A
Drain Current (Pulsed) IDp 48 A
*1
1.0
PD1
*1,2
Power Dissipation 1.2 W
PD2
*3
0.4
PD3
1 2 34
Overall
Channel Temperature Tch 150 C
Operating Ambient Temperature Topr -40 to + 85 C Pin Name
Storage Temperature Range C .1 Source .2 Drain
Tstg -55 to +150 1. 5.
Note) *1 Glass epoxy board: 25.4 mm 25.4 mm 0.8 mm Copper foil 2. .1 Gate 6. .2 Drain
2
3. .2 Source 7. .1 Drain
of the drain portion should have a area of 300 mm or more
.2 Gate .1 Drain
PD absolute maximum rating without a heat shink: 400 mW 4. 8.
*2 t = 10 s
*3 Stand-alone (without the board) Resistance
1
Rg k
value
Page 1 of 6
Established : 2011-05-16
Revised : 2013-09-02
2.4
2.8Doc No. TT4-EA-13635
Revision. 3
Product Standards
MOS FET
FC8V22040L
Electrical Characteristics Ta = 25 C 3C Tr.1,Tr.2
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = 1.0 mA, VGS = 0 24 V
Drain-source cutoff current IDSS VDS = 24 V, VGS = 0 1.0 A
Gate-source cutoff current IGSS VGS = 8.0 V, VDS = 0 10 A
Gate threshold voltage Vth ID = 1.0 mA, VDS = 10 V 0.40 0.85 1.50 V
m
RDS(ON)1 ID = 4.0 A, VGS = 4.5 V 7.0 10.5 15
RDS(ON)2 ID = 4.0 A, VGS = 4.0 V 7.2 11.0 16 m
Drain-source ON resistance
m
RDS(ON)3 ID = 4.0 A, VGS = 3.1 V 7.5 12.0 18
RDS(ON)4 ID = 4.0 A, VGS = 2.5 V 8.0 13.5 20 m
*1
td(on) VDD = 10 V, VGS = 0 V to 4 V 0.6 s
Turn-on delay time
*1
Rise time tr ID = 4.0 A 1.5 s
*1
Turn-off delay time td(off) VDD = 10 V, VGS = 4 V to 0 V 4.4 s
*1
tf ID = 4.0 A 2.8 s
Fall time
VSD
Source to Drain Diode Forward Voltage IS = 4.0 A, VGS = 0 V 0.8 1.2 V
1.
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Page 2of 6
Established : 2011-05-16
Revised : 2013-09-02