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FCA22N60N N-Channel SupreMOS MOSFET May 2014 FCA22N60N N-Channel SupreMOS MOSFET 600 V, 22 A, 165 m Features Description o BV > 650 V T = 150 C The SupreMOS MOSFET is Fairchild Semiconductors next DSS J generation of high voltage super-junction (SJ) technology R = 140 m (Typ.) V = 10 V, I = 11 A DS(on) GS D employing a deep trench filling process that differentiates it from Ultra Low Gate Charge (Typ. Q = 45 nC) g the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, Low Effective Output Capacitance (Typ. C = 196.4 pF) oss(eff.) superior switching performance and ruggedness. SupreMOS 100% Avalanche Tested MOSFET is suitable for high frequency switching power con- RoHS Compliant verter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. Application PDP TV Solar Inverter AC-DC Power Supply D G G D TO-3PN S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCA22N60N Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 22 C I Drain Current A D o - Continuous (T = 100 C) 13.8 C I Drain Current - Pulsed (Note 1) 66 A DM E Single Pulsed Avalanche Energy (Note 2) 672 mJ AS I Avalanche Current (Note 1) 7.3 A AR E Repetitive Avalanche Energy (Note 1) 2.75 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 205 W C P Power Dissipation D o o - Derate Above 25C1.64W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds C T 300 L Thermal Characteristics Symbol Parameter FCA22N60N Unit R Thermal Resistance, Junction to Case, Max. 0.61 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 40 JA 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCA22N60N Rev. C2