X-On Electronics has gained recognition as a prominent supplier of TK100E10N1,S1X MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK100E10N1,S1X MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK100E10N1,S1X Toshiba

TK100E10N1,S1X electronic component of Toshiba
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Part No.TK100E10N1,S1X
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET 100V N-Ch PWR FET 8800pF 140nC 207A
Datasheet: TK100E10N1,S1X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 1.9422 ea
Line Total: USD 5.83 
Availability - 2
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3
Multiples : 1
3 : USD 1.9422

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the TK100E10N1,S1X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK100E10N1,S1X and other electronic components in the MOSFETs category and beyond.

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TK100E10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E10N1TK100E10N1TK100E10N1TK100E10N1 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 2.8 m (typ.) (V = 10 V) DS(ON) GS (2) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (3) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1.0 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1,2) I 207 A D Drain current (DC) (Note 1,3) I 100 D Drain current (pulsed) (t = 1 ms) (Note 1) I 434 DP Power dissipation (T = 25) P 255 W c D Single-pulse avalanche energy (Note 4) E 222 mJ AS Avalanche current I 100 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-01 2014-06-30 1 Rev.6.0TK100E10N1 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.49 /W th(ch-c) Channel-to-ambient thermal resistance R 83.3 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Package limit is 100 A. Note 3: Device mounted with heatsink so that R becomes 2.77/W. th(ch-a) Note 4: V = 80 V, T = 25 (initial), L = 17.1 H, I = 100 A DD ch AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-06-30 2 Rev.6.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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