X-On Electronics has gained recognition as a prominent supplier of TK10A60D(STA4,Q,M) MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK10A60D(STA4,Q,M) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK10A60D(STA4,Q,M) Toshiba

TK10A60D(STA4,Q,M) electronic component of Toshiba
TK10A60D(STA4,Q,M) Toshiba
TK10A60D(STA4,Q,M) MOSFETs
TK10A60D(STA4,Q,M)  Semiconductors

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See Product Specifications
Part No. TK10A60D(STA4,Q,M)
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET MOSFET N-ch 600V 10A
Datasheet: TK10A60D(STA4,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4071 ea
Line Total: USD 1.41 
Availability - 27
Ship by Tue. 15 Apr to Fri. 18 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
27
Ship by Tue. 15 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 1.4071
10 : USD 1.1443
50 : USD 0.7812
100 : USD 0.6817
500 : USD 0.6217
1000 : USD 0.5897
2000 : USD 0.5841

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TK10A60D(STA4,Q,M) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK10A60D(STA4,Q,M) and other electronic components in the MOSFETs category and beyond.

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TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK10A60D Unit: mm Switching Regulator Applications Low drain-source ON-resistance: R = 0.58 (typ.) DS (ON) High forward transfer admittance: Y = 6.0 S (typ.) fs Low leakage current: I = 10 A (max) (V = 600 V) DSS DS Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 V GSS DC (Note 1) I 10 D Drain current A Pulse (Note 1) I 40 DP 1: Gate 2: Drain Drain power dissipation (Tc = 25C) P 45 W D 3: Source Single pulse avalanche energy E 363 mJ AS (Note 2) Avalanche current I 10 A AR JEDEC Repetitive avalanche energy (Note 3) E 4.5 mJ AR JEITA SC-67 Channel temperature T 150 C ch TOSHIBA 2-10U1B Storage temperature range T -55 to 150 C stg Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 C/W th (ch-c) Thermal resistance, channel to ambient R 62.5 C/W th (ch-a) 1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: V = 90 V, T = 25C (initial), L = 6.36 mH, R = 25 , I = 10 A DD ch G AR 3 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2008-04 1 2013-11-01 TK10A60D Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 600 V, V = 0 V 10 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON-resistance R V = 10 V, I = 5 A 0.58 0.75 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 5 A 1.5 6.0 S fs DS D Input capacitance C 1350 iss V = 25 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C 6 rss DS GS Output capacitance C 135 oss 10 V I = 5 A V Rise time t 22 D OUT r V GS 0 V Turn-on time t 55 on R = 40 L 50 Switching time ns Fall time t 15 f V 200 V DD Turn-off time t 100 off Duty 1%, t = 10 s w Total gate charge Q 25 g V 400 V, V = 10 V, I = 10 A 16 nC Gate-source charge Q gs DD GS D Gate-drain charge Q 9 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current (Note 1) I 10 A DR Pulse drain reverse current (Note 1) I 40 A DRP Forward voltage (diode) V I = 10 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 10 A, V = 0 V, 1300 ns rr DR GS dI /dt = 100 A/s Reverse recovery charge Q 12 C rr DR Marking Note 4: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb K10A60D Part No. (or abbreviation code) Please contact your TOSHIBA sales representative for details as to Lot No. environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament Note 4 and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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