X-On Electronics has gained recognition as a prominent supplier of TK14E65W,S1X MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK14E65W,S1X MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK14E65W,S1X Toshiba

TK14E65W,S1X electronic component of Toshiba
TK14E65W,S1X Toshiba
TK14E65W,S1X MOSFETs
TK14E65W,S1X  Semiconductors

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See Product Specifications
Part No. TK14E65W,S1X
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET MOSFET NChannel 0.22ohm DTMOS
Datasheet: TK14E65W,S1X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
35: USD 1.4294 ea
Line Total: USD 50.03 
Availability - 0
MOQ: 35  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 50
Multiples : 50
50 : USD 2.509
100 : USD 2.3751
500 : USD 2.03

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 35
Multiples : 1
35 : USD 1.4763

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 50
Multiples : 50
50 : USD 2.4534
100 : USD 2.3207
200 : USD 2.1881
300 : USD 2.0555
400 : USD 1.9229

0
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 4.125
10 : USD 3.4155
50 : USD 2.354
100 : USD 2.145
250 : USD 2.134
500 : USD 1.936
1000 : USD 1.859

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 35
Multiples : 1
35 : USD 1.4763

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 35
Multiples : 1
35 : USD 1.4294

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TK14E65W,S1X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK14E65W,S1X and other electronic components in the MOSFETs category and beyond.

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TK14E65W MOSFETs Silicon N-Channel MOS (DTMOS) TK14E65WTK14E65WTK14E65WTK14E65W 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.22 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.5 to 3.5 V (V = 10 V, I = 0.69 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 650 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 13.7 A D Drain current (pulsed) (Note 1) I 54.8 DP Power dissipation (T = 25) P 130 W c D Single-pulse avalanche energy (Note 2) E 194 mJ AS Avalanche current I 3.7 A AR Reverse drain current (DC) (Note 1) I 13.7 DR Reverse drain current (pulsed) (Note 1) I 54.8 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2013-06 2014-02-25 1 Rev.2.0TK14E65W 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.962 /W th(ch-c) Channel-to-ambient thermal resistance R 83.3 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 25 mH, R = 25 , I = 3.7 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-25 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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