TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK10A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R = 0.62 (typ.) DS (ON) High forward transfer admittance: Y = 5.0 S (typ.) fs Low leakage current: I = 10 A (max) (V = 500 V) DSS DS Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 500 V DSS Gate-source voltage V 30 V GSS DC (Note 1) I 10 D Drain current A Pulse (t = 1 ms) I 40 DP (Note 1) 1: Gate Drain power dissipation (Tc = 25C) 2: Drain P 45 W D 3: Source Single pulse avalanche energy E 264 mJ AS (Note 2) JEDEC Avalanche current I 10 A AR JEITA SC-67 Repetitive avalanche energy (Note 3) E 4.5 mJ AR Channel temperature T 150 C TOSHIBA 2-10U1B ch Storage temperature range T 55 to 150 C stg Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Internal Connection Thermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.78 C/W th (ch-c) Thermal resistance, channel to ambient R 62.5 C/W th (ch-a) Note 1: Ensure that the channel temperature does not exceed 150C. 1 Note 2: V = 90 V, T = 25C (initial), L = 4.49 mH, R = 25 , I = 10 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 Start of commercial production 2008-10 1 2013-11-01 TK10A50D Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 500 V, V = 0 V 10 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 500 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON-resistance R V = 10 V, I = 5 A 0.62 0.72 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 5 A 1.3 5.0 S fs DS D Input capacitance C 1050 iss V = 25 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C 5 rss DS GS Output capacitance C 100 oss Rise time t 10 V I = 5 A V 25 r D OUT V GS 0 V Turn-on time t on 60 R = 40 L 50 Switching time ns Fall time t 10 f V 200 V DD Turn-off time t 75 off Duty 1%, t = 10 s w Total gate charge Q 20 g Gate-source charge Q V 400 V, V = 10 V, I = 10 A 13 nC DD GS D gs Gate-drain charge Q 7 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 10 A DR (Note 1) Pulse drain reverse current (Note 1) I 40 A DRP Forward voltage (diode) V I = 10 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 10 A, V = 0 V, 1300 ns rr DR GS Reverse recovery charge Q dI /dt = 100 A/s 12 C DR rr Marking Note 4: A line under a Lot No. identifies the indication of product Labels.: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament K10A50D Part No. (or abbreviation code) Lot No. and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Note 4 2 2013-11-01