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X-On Electronics has gained recognition as a prominent supplier of TK13A60D(STA4,Q,M) MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK13A60D(STA4,Q,M) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK13A60D(STA4,Q,M) Toshiba

TK13A60D(STA4,Q,M) electronic component of Toshiba
TK13A60D(STA4,Q,M) Toshiba
TK13A60D(STA4,Q,M) MOSFETs
TK13A60D(STA4,Q,M)  Semiconductors

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See Product Specifications
Part No. TK13A60D(STA4,Q,M)
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 600 V 13A (Ta) 50W (Tc) Through Hole TO-220SIS
Datasheet: TK13A60D(STA4,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 1
2500 : USD 2.3534
3000 : USD 2.3302
4000 : USD 2.3058
5000 : USD 2.2838
6000 : USD 2.2607
10000 : USD 2.2375
20000 : USD 2.2155
25000 : USD 2.1936
50000 : USD 2.1716
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 1.8566
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.1926
10 : USD 2.6629
100 : USD 2.2406
500 : USD 1.8807
1000 : USD 1.7005
2500 : USD 1.5541
10000 : USD 1.5428
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.1176
5 : USD 1.8352
10 : USD 1.3368
28 : USD 1.2575
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
 
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We are delighted to provide the TK13A60D(STA4,Q,M) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK13A60D(STA4,Q,M) and other electronic components in the MOSFETs category and beyond.

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TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK13A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R = 0.33 (typ.) DS (ON) High forward transfer admittance: Y = 6.5 S (typ.) fs Low leakage current: I = 10 A (max) (V = 600 V) DSS DS Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 V GSS DC (Note 1) I 13 D Drain current A 1: Gate Pulse (Note 1) I 52 DP 2: Drain 3: Source Drain power dissipation (Tc = 25C) P 50 W D Single pulse avalanche energy E 511 mJ AS (Note 2) JEDEC Avalanche current I 13 A AR JEITA SC-67 Repetitive avalanche energy (Note 3) E 5.0 mJ AR TOSHIBA 2-10U1B Channel temperature T 150 C ch Storage temperature range T -55 to 150 C stg Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.5 C/W th (ch-c) Thermal resistance, channel to ambient R 62.5 C/W th (ch-a) 1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: V = 90 V, T = 25C (initial), L = 5.3 mH, R = 25 , I = 13 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2008-07 1 2013-11-01 TK13A60D Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 600 V, V = 0 V 10 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON-resistance R V = 10 V, I = 6.5 A 0.33 0.43 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 6.5 A 1.8 6.5 S fs DS D Input capacitance C 2300 iss V = 25 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C 10 rss DS GS Output capacitance C 250 oss Rise time t 10 V I = 6.5 A V 50 D OUT r V GS 0 V Turn-on time t 100 on R = 30 L 50 Switching time ns Fall time t 25 f V 200 V DD Turn-off time t 140 off Duty 1%, t = 10 s w Total gate charge Q 40 g V 400 V, V = 10 V, I = 13 A 25 nC Gate-source charge Q gs DD GS D Gate-drain charge Q 15 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 13 A DR (Note 1) Pulse drain reverse current (Note 1) I 52 A DRP Forward voltage (diode) V I = 13 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 13 A, V = 0 V, 1600 ns rr DR GS dI /dt = 100 A/s Reverse recovery charge Q 20 C rr DR Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to K13A60D Part No. (or abbreviation code) Lot No. environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament Note 4 and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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