X-On Electronics has gained recognition as a prominent supplier of FCA47N60F109 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCA47N60F109 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCA47N60F109 ON Semiconductor

FCA47N60F109 electronic component of ON Semiconductor
FCA47N60F109 ON Semiconductor
FCA47N60F109 MOSFETs
FCA47N60F109  Semiconductors

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See Product Specifications
Part No. FCA47N60F109
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; 417W; TO3PN
Datasheet: FCA47N60F109 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 10.5024 ea
Line Total: USD 10.5 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 10.5024
2 : USD 8.8229
5 : USD 8.3417
30 : USD 7.9756

   
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Gate Charge
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We are delighted to provide the FCA47N60F109 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCA47N60F109 and other electronic components in the MOSFETs category and beyond.

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The FCA47N60F109 is an insulated gate bipolar transistor (IGBT) from ON Semiconductor. It is a non-punch-through IGBT with a maximum blocking voltage of 600V, and rated for up to 5A collector current at 25°C ambient. This device features reduced gate charge, low on-state resistance, and a functioning temperature range of -55°C to +175°C. Special features include an NTC thermistor input, gate voltage protection, and integrated ESD protection. It is designed for use in induction heating, welding, power converters, motor control and UPS applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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