FCB20N60 N-Channel SuperFET MOSFET October 2013 FCB20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 m Features Description 650 V T = 150 C SuperFET MOSFET is Fairchild Semiconductors first genera- J tion of high voltage super-junction (SJ) MOSFET family that is Typ. R = 150 m DS(on) utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Q = 75 nC) g resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch- Low Effective Output Capacitance (Typ. C .eff = 165 pF) oss ing performance, dv/dt rate and higher avalanche energy. Con- 100% Avalanche Tested sequently, SuperFET MOSFET is very suitable for the switching RoHS Compliant power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Application Lighting AC-DC Power Supply Solar Inverter D D G G 2 S D -PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FCB20N60TM Unit V Drain to Source Voltage 600 V DSS o - Continuous (T = 25 C) 20 C I Drain Current A D o - Continuous (T = 100 C) 12.5 C I Drain Current - Pulsed (Note 1) 60.0 A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 690 mJ AS I Avalanche Current (Note 1) 20 A AR E Repetitive Avalanche Energy (Note 1) 20.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 208 W C P Power Dissipation D o o - Derate above 25C1.67W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FCB20N60TM Unit R Thermal Resistance, Junction to Case, Max 0.6 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. 40 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCB20N60 Rev. C1 FCB20N60 N-Channel SuperFET MOSFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 2 FCB20N60 FCB20N60TM D -PAK 330mm 24m 800 o Electrical Characteristics T = 25 C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics o V = 0 V,I = 250 A, T = 25 C 600 - - V GS D C BV Drain to Source Breakdown Voltage DSS o V = 0 V,I = 250 A, T = 150C- 650 - V GS D C BV Breakdown Voltage Temperature DSS o o I = 250 A, Referenced to 25C- 0.6 - V/ C D / T Coefficient J BV Drain-Source Avalanche Breakdown DS V = 0 V, I = 20 A - 700 - V GS D Voltage V = 600 V, V = 0 V - - 1 DS GS I Zero Gate Voltage Drain Current A DSS o V = 480 V, V = 0 V, T = 125C- - 10 DS GS C I Gate to Body Leakage Current V = 30 V, V = 0 V - - 100 nA GSS GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A3.0-5.0V GS(th) GS DS D R Static Drain to Source On Resistance V = 10 V, I = 10 A - 0.15 0.19 DS(on) GS D g Forward Transconductance V = 40 V, I = 10 A -17 - S FS DS D Dynamic Characteristics C Input Capacitance - 2370 3080 pF iss V = 25 V, V = 0 V DS GS C Output Capacitance - 1280 1665 pF oss f = 1.0 MHz C Reverse Transfer Capacitance - 95 - pF rss C Output Capacitance V = 480 V, V = 0 V, f = 1.0 MHz - 65 85 pF oss DS GS C eff. Effective Output Capacitance V = 0 V to 400 V, V = 0 V - 165 - pF oss DS GS Switching Characteristics t Turn-On Delay Time - 62 135 ns d(on) V = 300 V, I = 20 A t Turn-On Rise Time - 140 290 ns DD D r R = 25 G t Turn-Off Delay Time - 230 470 ns d(off) t Turn-Off Fall Time (Note 4) - 65 140 ns f Q Total Gate Charge at 10V -75 98 nC g(tot) V = 480 V, I = 20 A, DS D Q Gate to Source Gate Charge - 13.5 18 nC V = 10 V gs GS (Note 4) Q Gate to Drain Miller Charge - 36 - nC gd Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 20 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 60 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 20 A - - 1.4 V SD GS SD t Reverse Recovery Time - 530 - ns rr V = 0 V, I = 20 A GS SD dI /dt = 100 A/s Q Reverse Recovery Charge - 10.5 - C F rr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I = 10 A, V = 50 V, R = 25 , Starting T = 25 C AS DD G J 3. I 20 A, di/dt 200 A/ s, V BV , Starting T = 25C SD DD DSS J 4. Essentially Independent of Operating Temperature Typical Characteristics 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FCB20N60 Rev. C1