MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.3 Final Power Management & Multimarket600VCoolMOE6 Power Transistor IPP60R280E6,IPA60R280E6 IPW60R280E6 1 Description CoolMO is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMO E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applicationsevenmoreefficient,morecompact,lighter,andcooler. drain Features pin 2 Extremely low losses due to very low FOM Rdson*Qgand Eoss Very high commutation ruggedness gate pin 1 Easy to use/drive 1) JEDEC qualified, Pb-free plating, Halogenfree source pin 3 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate orseparate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 0.28 DS(on),max Q 43 nC g,typ I 40 A D,pulse E 400V 3.7 J oss Body diode di/dt 500 A/s Type /Ordering Code Package Marking Related Links IPW60R280E6 PG-TO247 IFX CoolMOS Webpage IPP60R280E6 PG-TO220 6R280E6 IFX Designtools IPA60R280E6 PG-TO220 FullPAK 1) J-STD20 and JESD22 Rev. 2.3 Page 2 2018-02-28