FCB199N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 14 A, 199 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brandnew high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advance technology is tailored to minimize 650 V 199 m 10 V 14 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for various power system miniaturization and higher D efficiency. Features 700 V T = 150C J G Typ. R = 170 m DS(on) Ultra Low Gate Charge (Typ. Q = 30 nC) g S Low Effective Output Capacitance (Typ. C = 277 pF) oss(eff.) POWER MOSFET 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant D Applications G Telecom / Server Power Supplies S Industrial Power Supplies 2 D PAK CASE 418AJ UPS / Solar MARKING DIAGRAM Y&Z&3&K FCB 199N65S3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCB199N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 4 FCB199N65S3/DFCB199N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 14 A D C Continuous (T = 100C) 9 C I Drain Current Pulsed (Note 1) 35 A DM E Single Pulsed Avalanche Energy (Note 2) 76 mJ AS I Avalanche Current (Note 1) 2.5 A AS E Repetitive Avalanche Energy (Note 1) 0.98 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 98 W D C Derate Above 25C 0.79 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 2.5 A, R = 25 , starting T = 25C. AS G J 3. I 7 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 1.27 C/W JC Thermal Resistance, Junction to Ambient, Max. (Note 4) 40 2 4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR4 material. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping 2 FCB199N65S3 FCB199N65S3 D PAK 330 mm 24 mm 800 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2