DMN10H700S
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low Gate Threshold Voltage
I
D
Low Input Capacitance
BV R
DSS DS(ON)
T = +25C
A
Fast Switching Speed
700m @ V = 10V 0.70A
GS Small Surface Mount Package
100V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
0.62A
900m @ V = 6.0V
GS
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
Mechanical Data
resistance (R ) and yet maintain superior switching
DS(ON)
Case: SOT23
performance, making it ideal for high efficiency power management
Case Material: Molded Plastic. UL Flammability Classification
applications.
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Applications Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish Annealed over Alloy 42
DC-DC Converters
Leadframe).
Power Management Functions
Terminal Connections: See Diagram
Battery Operated Systems and Solid-State Relays
Weight: 0.006 grams (Approximate)
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
D
D
G
G S
S
Top View
Top View
Equivalent Circuit
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMN10H700S-7 SOT23 3,000/Tape & Reel
DMN10H700S-13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN10H700S
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 100 V
DSS
Gate-Source Voltage V 20 V
GSS
Steady T = +25C 0.70
A
Continuous Drain Current (Note 6) V = 10V I A
GS D
State 0.56
T = +70C
A
Pulsed Drain Current (10s Pulse, Duty Cycle 1%) 2.5 A
IDM
Maximum Body Diode Continuous Current (Note 6) I 0.6 A
S
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Note 5) 0.4
Total Power Dissipation P W
D
(Note 6) 0.5
Thermal Resistance, Junction to Ambient (Note 5) R 303
JA
Steady state
Thermal Resistance, Junction to Ambient (Note 6) 239 C/W
R
JA
(Note 6)
Thermal Resistance, Junction to Case 88
R
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 100 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 100V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 2.0 2.7 4.0 V
V V = V , I = 250A
GS(TH) DS GS D
540 700
V = 10V, I = 1.5A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
550 900 V = 6.0V, I = 1.0A
GS D
Diode Forward Voltage V 0.9 1.1 V V = 0V, I = 1.5A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
235
Input Capacitance C
iss
V = 50V, V = 0V,
DS GS
7
Output Capacitance C pF
oss
f = 1.0MHz
5
Reverse Transfer Capacitance C
rss
Gate Resistance R 1.9 V = 0V, V = 0V, f = 1.0MHz
G DS GS
4.6
Total Gate Charge
Q
g
V = 50V, V = 10V,
DS GS
Gate-Source Charge 1.1 nC
Q
gs
I = 1.0A
D
Gate-Drain Charge 1.6
Q
gd
Turn-On Delay Time 2.5
t
D(ON)
1.1
Turn-On Rise Time t V = 50V, I = 1.0A,
R DS D
ns
5.4
Turn-Off Delay Time t V = 10V, R = 6.0
D(OFF) GS G
1.0
Turn-Off Fall Time t
F
22
Reverse Recovery Time t ns
RR
V = 100V, I =1.8A, di/dt=100A/s
R F
15
Reverse Recovery Charge Q nC
RR
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 7
DMN10H700S October 2017
Diodes Incorporated
www.diodes.com
Document number: DS38103 Rev. 3 - 2
NEW PRODUCT
ADVANCED INFORMATION