TSM80N400CF Taiwan Semiconductor N-Channel Power MOSFET 800V, 12A, 400m FEATURES KEY PERFORMANCE PARAMETERS Super-Junction technology PARAMETER VALUE UNIT High performance, small R *Q figure of merit (FOM) DS(ON) g V 800 V DS High ruggedness performance R (max) 400 m DS(on) 100% UIS and R tested g Q 51 nC g Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS Power Supply AC/DC LED Lighting ITO-220S ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 800 V DS Gate-Source Voltage V 30 V GS T = 25C 12 A C (Note 1) Continuous Drain Current I D T = 100C 7.5 A C (Note 2) Pulsed Drain Current I 48 A DM Total Power Dissipation T = 25C P 69 W C D (Note 3) Single Pulse Avalanche Energy E 812 mJ AS (Note 3) Single Pulse Avalanche Current I 5.7 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 1.8 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: B1704 TSM80N400CF Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 800 -- -- GS D DSS V Gate Threshold Voltage V = V , I = 250A V 2 3.3 4 V DS GS D GS(TH) Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 800V, V = 0V I -- -- 1 A DS GS DSS V = 10V, I = 2.7A -- 300 400 Drain-Source On-State Resistance GS D R m DS(on) (Note 5) Dynamic Total Gate Charge Q -- 51 -- g V = 640V, I = 8A, DS D Gate-Source Charge Q -- 10 -- nC gs V = 10V GS Gate-Drain Charge Q -- 24 -- gd Input Capacitance C -- 1848 -- V = 100V, V = 0V, iss DS GS pF f = 1.0MHz Output Capacitance C -- 90 -- oss Gate Resistance f = 1.0MHz R -- 3.3 6.6 g (Note 6) Switching Turn-On Delay Time t -- 19 -- d(on) Turn-On Rise Time t -- 26 -- r V = 400V, I = 8A, DD D ns Turn-Off Delay Time V = 10V, R = 5 t -- 57 -- GS GEN d(off) Turn-Off Fall Time t -- 28 -- f (Note 4) Source-Drain Diode Body-Diode Continuous Forward Current -- -- 8 A I S Body-Diode Pulsed Current -- -- 32 A I SM Forward Voltage -- -- 1.4 V I = 8A, V = 0V V S GS SD Reverse Recovery Time -- 340 -- ns t I = 8A rr S Reverse Recovery Charge -- 4.9 -- C dI /dt = 100A/s Q F rr Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. o 3. L = 50mH, I = 5.7A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM80N400CF C0G ITO-220S 50pcs / Tube 2 Version: B1704