X-On Electronics has gained recognition as a prominent supplier of NTLUD3A50PZTBG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTLUD3A50PZTBG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTLUD3A50PZTBG ON Semiconductor

NTLUD3A50PZTBG electronic component of ON Semiconductor
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Part No.NTLUD3A50PZTBG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PFET UDFN6 20V 5.6A 50MOH
Datasheet: NTLUD3A50PZTBG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.3646
6000 : USD 0.3474
9000 : USD 0.3447
12000 : USD 0.3422
15000 : USD 0.3396
24000 : USD 0.3369
30000 : USD 0.3342
45000 : USD 0.3316
60000 : USD 0.3289
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.4123
9000 : USD 0.4072
24000 : USD 0.3933
45000 : USD 0.3818
N/A

Obsolete
   
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We are delighted to provide the NTLUD3A50PZTBG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTLUD3A50PZTBG and other electronic components in the MOSFETs category and beyond.

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NTLUD3A50PZ MOSFET Power, Dual, P-Channel, Cool, UDFN, 2.0x2.0x0.55 mm -20 V, -5.6 A NTLUD3A50PZ 2. Surface-mounted on FR4 board using the minimum recommended pad size 2 of 30 mm , 1 oz. Cu based on both FETs on. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient Steady State (Note 3) R 91 C/W JA Junction-to-Ambient t 5 s (Note 3) R 57 JA Junction-to-Ambient Steady State min Pad (Note 4) R 228 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 13 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 20 V DS Gate-to-Source Leakage Current I V = 0 V, V = 5.0 V 5.0 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 3.0 mV/C GS(TH) J Drain-to-Source On Resistance R V = 4.5 V, I = 4.0 A 37 50 m DS(on) GS D V = 2.5 V, I = 3.0 A 46 70 GS D V = 1.8 V, I = 2.0 A 63 115 GS D V = 1.5 V, I = 1.0 A 86 175 GS D Forward Transconductance g V = 5.0 V, I = 3.0 A 16 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 920 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 85 OSS V = 15 V DS Reverse Transfer Capacitance C 80 RSS nC Total Gate Charge Q 10.4 G(TOT) Threshold Gate Charge Q 0.5 G(TH) V = 4.5 V, V = 15 V GS DS I = 3.0 A Gate-to-Source Charge Q D 1.2 GS Gate-to-Drain Charge Q 3.0 GD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time t 7.0 ns d(ON) Rise Time t 12 r V = 4.5 V, V = 15 V, GS DD I = 3.0 A, R = 1 Turn-Off Delay Time t D G 39 d(OFF) Fall Time t 30 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD T = 25C 0.67 1.0 V J V = 0 V, GS I = 1.0 A S T = 125C 0.56 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces) based on both FETs on. 2 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 1 oz. Cu based on both FETs on. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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