NTLUS020N03C MOSFET Power, Single, N-Channel, Cool, UDFN6, 1.6x1.6x0.55 mm 30 V, 13 m , 8.2 A www.onsemi.com Features UDFN Package with Exposed Drain Pads for Excellent Thermal MOSFET Conduction V R MAX I MAX (BR)DSS DS(on) D Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving 13 m 10 V Ultra Low R 30 V 8.2 A DS(on) 18 m 4.5 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D Applications Power Load Switch Wireless Charging DCDC Converters G Motor Drive MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit S Drain-to-Source Voltage V 30 V DSS NCHANNEL MOSFET Gate-to-Source Voltage V 20 V GS Continuous Drain T = 25C I 8.2 A A D MARKING DIAGRAM Current R JA S D T = 85C 5.9 (Note 1, 3) Steady A 1 State UDFN6 Power Dissipation T = 25C P 1.52 W A D ALM ( COOL) R (Note 1, 3) JA CASE 517AU Continuous Drain T = 25C I 5.3 A A D AL = Specific Device Code Current R JA Steady T = 85C 3.8 (Note 2, 3) A M = Date Code State = PbFree Package Power Dissipation T = 25C P 0.65 W A D (Note: Microdot may be in either location) R (Note 2, 3) JA Pulsed Drain Current t = 10 s I 24 A p DM PIN CONNECTIONS Operating Junction and Storage T , T -55 to C J STG Temperature 150 Lead Temperature for Soldering Purposes T 260 C L D 1 6 D (1/8 from case for 10 s) D Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be D 2 5 D assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS G 3 4 S Parameter Symbol Max Unit S Junction-to-Ambient Steady State 82.5 R JA (Top View) (Note 1, 3) C/W Junction-to-Ambient Steady State min R 194.8 JA Pad (Note 2, 3) ORDERING INFORMATION See detailed ordering and shipping information in the package 2 1. Surfacemounted on FR4 board using 1 in pad size, 2 oz Cu pad. dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2019 Rev. 2 NTLUS020N03C/DNTLUS020N03C 2. Surface-mounted on FR4 board using the min pad size, 2 oz Cu pad. 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 4. This device does not have ESD protection diode. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T 13.4 mV/C I = 250 A, ref to 25C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 24 V DS T = 125C 10 J Gate-to-Source Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.2 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T I = 250 A, ref to 25C 4.2 mV/C GS(TH) J D Drain-to-Source On Resistance R V = 10 V, I = 8.0 A 10 13 m DS(on) GS D V = 4.5 V, I = 8 A 14 18 GS D Forward Transconductance g V = 1.5 V, I = 8 A 24 S FS DS D CHARGES & CAPACITANCES Input Capacitance C 620 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 280 OSS V = 15 V DS Reverse Transfer Capacitance C 15 RSS Total Gate Charge Q 5 nC G(TOT) Threshold Gate Charge Q 0.8 G(TH) V = 4.5 V, V = 15 V GS DS I = 8 A D Gate-to-Source Charge Q 1.8 GS Gate-to-Drain Charge Q 1.6 GD Total Gate Charge Q V = 10 V, V = 15 V I = 8 A 11 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time t 9 ns d(ON) Rise Time t 26 r V = 4.5 V, V = 15 V, GS DD I = 8 A, R = 6 D G Turn-Off Delay Time t 13 d(OFF) Fall Time t 3 f SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6) Turn-On Delay Time t 6 ns d(ON) Rise Time t 24 r V = 10 V, V = 15 V, GS DD I = 8 A, R = 6 D G Turn-Off Delay Time t 16 d(OFF) Fall Time t 2.3 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V T = 25C 0.8 1 SD J V = 0 V, GS I = 8 A S T = 125C 0.7 J 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2