NTLUS3A18PZ MOSFET Power, Single, P-Channel, UDFN, 2.0x2.0x0.55 mm -20 V, -8.2 A www.onsemi.com Features UDFN Package with Exposed Drain Pads for Excellent Thermal MOSFET Conduction V R MAX I MAX (BR)DSS DS(on) D Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving 18 m 4.5 V Ultra Low R DS(on) 25 m 2.5 V 20 V 8.2 A ESD DiodeProtected Gate 50 m 1.8 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 90 m 1.5 V Compliant Applications D Optimized for Power Management Applications for Portable Products, such as Cell Phones, Media Tablets, PMP, DSC, GPS, and Others Battery Switch G High Side Load Switch MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Drain-to-Source Voltage V 20 V DSS S Gate-to-Source Voltage V 8.0 V GS PChannel MOSFET Continuous Drain Steady T = 25C I 8.2 A A D Current (Note 1) State T = 85C 5.9 MARKING DIAGRAM A S Continuous Drain D Current (Note 1) t 5 s T = 25C 12.2 A 1 UDFN6 AC M Power Dissipa- Steady T = 25C P 1.7 W A D CASE 517BG tion (Note 1) State Pin 1 t 5 s T = 25C 3.8 A AC= Specific Device Code M = Date Code Continuous Drain Steady T = 25C I 5.1 A A D = PbFree Package Current (Note 2) State T = 85C 3.7 A (Note: Microdot may be in either location) Power Dissipation (Note 2) T = 25C P 0.7 W A D PIN CONNECTIONS Pulsed Drain Current tp = 10 s I 25 A DM Operating Junction and Storage T , -55 to C J Temperature T 150 STG ESD (HBM, JESD22A114) V 2000 V ESD Source Current (Body Diode) (Note 2) I 1.7 A S Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (Top View) 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). ORDERING INFORMATION 2. Surface-mounted on FR4 board using the minimum recommended pad size 2 of 30 mm , 2 oz. Cu. See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 4 NTLUS3A18PZ/DNTLUS3A18PZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient Steady State (Note 3) R 72 JA Junction-to-Ambient t 5 s (Note 3) R 33 C/W JA Junction-to-Ambient Steady State min Pad (Note 4) R 189 JA 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C +10 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 20 V DS Gate-to-Source Leakage Current I V = 0 V, V = 5.0 V 5 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 3.0 mV/C GS(TH) J Drain-to-Source On Resistance R m V = 4.5 V, I = 7.0 A 14.6 18 DS(on) GS D V = 2.5 V, I = 5.0 A 19 25 GS D V = 1.8 V, I = 3.0 A 25 50 GS D V = 1.5 V, I = 1.0 A 40 90 GS D Forward Transconductance g V = 5 V, I = 3.0 A 40 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 2240 ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 240 OSS V = 15 V DS Reverse Transfer Capacitance C 210 RSS nC Total Gate Charge Q 28 G(TOT) Threshold Gate Charge Q 1.0 G(TH) V = 4.5 V, V = 15 V GS DS I = 4.0 A D Gate-to-Source Charge Q 2.9 GS Gate-to-Drain Charge Q 8.8 GD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) ns Turn-On Delay Time t 8.6 d(ON) Rise Time t 15 r V = 4.5 V, V = 15 V, GS DD I = 4.0 A, R = 1 D G Turn-Off Delay Time t 150 d(OFF) Fall Time t 88 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V T = 25C 0.63 1.0 SD J V = 0 V, GS I = 1.0 A S T = 125C 0.50 J ns Reverse Recovery Time t 26.1 RR Charge Time t 10.2 a V = 0 V, dIs/dt = 100 A/ s, GS I = 1.0 A Discharge Time t S 15.9 b Reverse Recovery Charge Q 12 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2