NTLUS3A40PZTBG ON Semiconductor

NTLUS3A40PZ MOSFET Power, Single, P-Channel, ESD, Cool, UDFN, 2.0x2.0x0.55 mm -20 V, -9.4 A NTLUS3A40PZ 2. Surface-mounted on FR4 board using the minimum recommended pad size 2 of 30 mm , 2 oz. Cu. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient Steady State (Note 3) R 72 C/W JA Junction-to-Ambient t 5 s (Note 3) R 33 JA Junction-to-Ambient Steady State min Pad (Note 4) R 189 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 5.0 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 1.0 DSS J V = 0 V, GS V = 20 V DS T = 85C 10 J Gate-to-Source Leakage Current I V = 0 V, V = 8.0 V 10 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 3.0 mV/C GS(TH) J Drain-to-Source On Resistance R V = 4.5 V, I = 6.4 A 23 29 m DS(on) GS D V = 2.5 V, I = 4.8 A 31 39 GS D V = 1.8 V, I = 2.5 A 43 60 GS D V = 1.5 V, I = 1.5 A 60 120 GS D Forward Transconductance g V = 15 V, I = 4.0 A 18 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2600 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 200 OSS V = 15 V DS Reverse Transfer Capacitance C 190 RSS nC Total Gate Charge Q 29 G(TOT) Threshold Gate Charge Q 1.4 G(TH) V = 4.5 V, V = 15 V GS DS I = 4.0 A Gate-to-Source Charge Q D 3.7 GS Gate-to-Drain Charge Q 8.1 GD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time t 9.0 ns d(ON) Rise Time t 18 r V = 4.5 V, V = 15 V, GS DD I = 4.0 A, R = 1 Turn-Off Delay Time t D G 126 d(OFF) Fall Time t 71 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD T = 25C 0.65 1.0 V J V = 0 V, GS I = 1.0 A S T = 125C 0.55 J 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.