X-On Electronics has gained recognition as a prominent supplier of NTLUS030N03CTAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTLUS030N03CTAG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTLUS030N03CTAG ON Semiconductor

NTLUS030N03CTAG electronic component of ON Semiconductor
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Part No.NTLUS030N03CTAG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET T6 30V NCH 1.6X1.6 UDFN
Datasheet: NTLUS030N03CTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6829 ea
Line Total: USD 1.68 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2112
6000 : USD 0.2099

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 1.0817
6000 : USD 0.9909
15000 : USD 0.9536

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1716

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1716

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.6829
10 : USD 0.8174
100 : USD 0.4557
500 : USD 0.3604
1000 : USD 0.2889
3000 : USD 0.2609
6000 : USD 0.2537

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NTLUS030N03CTAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTLUS030N03CTAG and other electronic components in the MOSFETs category and beyond.

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NTLUS030N03C MOSFET Power, Single, N-Channel, Cool, UDFN6, 1.6x1.6x0.55 mm 30 V, 18 m , 6.9 A www.onsemi.com Features UDFN Package with Exposed Drain Pads for Excellent Thermal MOSFET Conduction V R MAX I MAX (BR)DSS DS(on) D Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving 18 m 10 V Ultra Low R DS(on) 30 V 6.9 A 26 m 4.5 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D Applications Power Load Switch Wireless Charging DCDC Converters G Motor Drive MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit S Drain-to-Source Voltage V 30 V NCHANNEL MOSFET DSS Gate-to-Source Voltage V 20 V GS Continuous Drain T = 25C I 6.9 A A D MARKING DIAGRAM S D Current R JA T = 85C 5.0 (Note 1, 3) Steady 1 A UDFN6 State AKM ( COOL) Power Dissipation T = 25C P 1.49 W A D CASE 517AU R (Note 1, 3) JA Continuous Drain T = 25C I 4.5 A AK = Specific Device Code A D Current R M = Date Code JA Steady T = 85C 3.2 (Note 2, 3) A = PbFree Package State Power Dissipation T = 25C P 0.64 W (Note: Microdot may be in either location) A D R (Note 2, 3) JA Pulsed Drain Current t = 10 s I 20 A p DM PIN CONNECTIONS Operating Junction and Storage T , T -55 to C J STG Temperature 150 Lead Temperature for Soldering Purposes T 260 C D 1 6 D L (1/8 from case for 10 s) D Stresses exceeding those listed in the Maximum Ratings table may damage the D 2 5 D device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. G 3 4 S THERMAL RESISTANCE RATINGS S Parameter Symbol Max Unit Junction-to-Ambient Steady State 83.7 R JA (Top View) (Note 1, 3) C/W Junction-to-Ambient Steady State min R 196.6 JA Pad (Note 2, 3) ORDERING INFORMATION See detailed ordering and shipping information in the package 2 1. Surfacemounted on FR4 board using 1 in pad size, 2 oz Cu pad. dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2019 Rev. 2 NTLUS030N03C/DNTLUS030N03C 2. Surfacemounted on FR4 board using the min pad size, 2 oz Cu pad. 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 4. This device does not have ESD protection diode. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 14.2 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 24 V DS T = 125C 10 J Gate-to-Source Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.2 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T I = 250 A, ref to 25C 4.1 mV/C GS(TH) J D Drain-to-Source On Resistance R V = 10 V, I = 6.0 A 14 18 m DS(on) GS D V = 4.5 V, I = 5.0 A 20 26 GS D Forward Transconductance g V = 1.5 V, I = 5.0 A 16 S FS DS D CHARGES & CAPACITANCES Input Capacitance C 400 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 215 OSS V = 15 V DS Reverse Transfer Capacitance C 21 RSS Total Gate Charge Q 3.7 nC G(TOT) Threshold Gate Charge Q 0.6 G(TH) V = 4.5 V, V = 15 V GS DS I = 5.0 A D Gate-to-Source Charge Q 1.3 GS Gate-to-Drain Charge Q 1.2 GD Total Gate Charge Q V = 10 V, V = 15 V I = 5.0 A 8 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time t 9 ns d(ON) Rise Time t 15 r V = 4.5 V, V = 15 V, GS DD I = 5.0 A, R = 6 D G Turn-Off Delay Time t 11 d(OFF) Fall Time t 2.5 f SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6) Turn-On Delay Time t 6 ns d(ON) Rise Time t 13 r V = 10 V, V = 15 V, GS DD I = 5.0 A, R = 6 D G Turn-Off Delay Time t 14 d(OFF) Fall Time t 2 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.0 V SD J V = 0 V, GS I = 5.0 A S T = 125C 0.7 J 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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