NTLUS3A18PZ
Power MOSFET
20 V, 8.2 A, Single PChannel,
2.0x2.0x0.55 mm UDFN Package
Features
UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
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Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving
MOSFET
Ultra Low R
DS(on)
V R MAX I MAX
(BR)DSS DS(on) D
ESD DiodeProtected Gate
18 m @ 4.5 V
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
25 m @ 2.5 V
Compliant
20 V 8.2 A
50 m @ 1.8 V
Applications
90 m @ 1.5 V
Optimized for Power Management Applications for Portable
Products, such as Cell Phones, Media Tablets, PMP, DSC, GPS, and
D
Others
Battery Switch
High Side Load Switch
MAXIMUM RATINGS (T = 25C unless otherwise stated)
J
G
Parameter Symbol Value Unit
Drain-to-Source Voltage V 20 V
DSS
Gate-to-Source Voltage V 8.0 V
GS
Continuous Drain Steady T = 25C I 8.2 A
A D
Current (Note 1) State
S
T = 85C 5.9
A
Continuous Drain
PChannel MOSFET
Current (Note 1)
t 5 s T = 25C 12.2
A
Power Dissipa- Steady T = 25C P 1.7 W
MARKING DIAGRAM
A D S
tion (Note 1) State
D
1
t 5 s T = 25C 3.8
A
UDFN6 AC M
CASE 517BG
Continuous Drain Steady I A
T = 25C 5.1
A D
Pin 1
Current (Note 2) State
T = 85C 3.7
AC= Specific Device Code
A
M = Date Code
Power Dissipation (Note 2) T = 25C P 0.7 W
A D
= PbFree Package
Pulsed Drain Current tp = 10 s I 25 A
DM
(Note: Microdot may be in either location)
Operating Junction and Storage T , -55 to C
J
Temperature T 150
STG PIN CONNECTIONS
ESD (HBM, JESD22A114) V 2000 V
ESD
Source Current (Body Diode) (Note 2) I 1.7 A
S
Lead Temperature for Soldering Purposes T 260 C
L
(1/8 from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
(Top View)
2
of 30 mm , 2 oz. Cu.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Semiconductor Components Industries, LLC, 2016
1 Publication Order Number:
April, 2016 Rev. 4 NTLUS3A18PZ/DNTLUS3A18PZ
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction-to-Ambient Steady State (Note 3) R 72
JA
Junction-to-Ambient t 5 s (Note 3) R 33
C/W
JA
Junction-to-Ambient Steady State min Pad (Note 4) R 189
JA
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V
(BR)DSS GS D
Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C +10 mV/C
(BR)DSS J D
Temperature Coefficient
Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A
DSS GS J
V = 20 V
DS
Gate-to-Source Leakage Current I V = 0 V, V = 5.0 V 5 A
GSS DS GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V
GS(TH) GS DS D
Negative Threshold Temp. Coefficient V /T 3.0 mV/C
GS(TH) J
Drain-to-Source On Resistance R m
V = 4.5 V, I = 7.0 A 14.6 18
DS(on) GS D
V = 2.5 V, I = 5.0 A 19 25
GS D
V = 1.8 V, I = 3.0 A 25 50
GS D
V = 1.5 V, I = 1.0 A 40 90
GS D
Forward Transconductance g V = 5 V, I = 3.0 A 40 S
FS DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
pF
Input Capacitance C 2240
ISS
V = 0 V, f = 1 MHz,
GS
Output Capacitance C 240
OSS
V = 15 V
DS
Reverse Transfer Capacitance C 210
RSS
nC
Total Gate Charge Q 28
G(TOT)
Threshold Gate Charge Q 1.0
G(TH)
V = 4.5 V, V = 15 V;
GS DS
I = 4.0 A
D
Gate-to-Source Charge Q 2.9
GS
Gate-to-Drain Charge Q 8.8
GD
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
ns
Turn-On Delay Time t 8.6
d(ON)
Rise Time t 15
r
V = 4.5 V, V = 15 V,
GS DD
I = 4.0 A, R = 1
D G
Turn-Off Delay Time t 150
d(OFF)
Fall Time t 88
f
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V V
T = 25C 0.63 1.0
SD J
V = 0 V,
GS
I = 1.0 A
S T = 125C 0.50
J
ns
Reverse Recovery Time t 26.1
RR
Charge Time t 10.2
a
V = 0 V, dIs/dt = 100 A/s,
GS
I = 1.0 A
Discharge Time t S 15.9
b
Reverse Recovery Charge Q 12 nC
RR
5. Pulse Test: pulse width 300 s, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
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