NTMFS4927NT1G ON Semiconductor

NTMFS4927N, NTMFS4927NC MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features NTMFS4927N, NTMFS4927NC MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Single Pulse DraintoSource Avalanche E 20 mJ AS Energy (T = 25C, V = 24 V, V = 20 V, J DD GS I = 20 A , L = 0.1 mH, R = 25 ) L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 6.0 JC JunctiontoAmbient Steady State (Note 3) R 46.3 JA C/W JunctiontoAmbient Steady State (Note 4) R 136.2 JA JunctiontoAmbient (t 10 s) (Note 3) R 20.7 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 30 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V VGS = 0 V, I = 8.4 A, 34 V (BR)DSSt D(aval) (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 24 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.32 1.6 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 3.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 5.8 7.3 DS(on) GS D I = 15 A 5.7 D m V = 4.5 V I = 30 A 9.6 12 GS D I = 15 A 9.2 D Forward Transconductance g V = 1.5 V, I = 15 A 40 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 913 ISS Output Capacitance C 366 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 108 RSS Capacitance Ratio C / V = 0 V, V = 15 V, f = 1 MHz 0.118 0.237 RSS GS DS C ISS 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.