X-On Electronics has gained recognition as a prominent supplier of NTMFS4927NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS4927NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS4927NT1G ON Semiconductor

NTMFS4927NT1G electronic component of ON Semiconductor
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Part No.NTMFS4927NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 30 V 7.9A (Ta), 38A (Tc) 920mW (Ta), 20.8W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet: NTMFS4927NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.3123 ea
Line Total: USD 468.45 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3834
10 : USD 0.3311
25 : USD 0.2941
50 : USD 0.2572
100 : USD 0.2202
250 : USD 0.2159
500 : USD 0.2159
1000 : USD 0.2159

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1500
Multiples : 1500
1500 : USD 0.3123
3000 : USD 0.2733
7500 : USD 0.2557
10500 : USD 0.2381
37500 : USD 0.2257

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8
10 : USD 0.6612
100 : USD 0.4937
500 : USD 0.388

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8
10 : USD 0.6612
100 : USD 0.4937
500 : USD 0.388

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1500
Multiples : 1500
1500 : USD 0.1696
6000 : USD 0.162

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1394
Multiples : 1394
1394 : USD 0.3113

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8164
10 : USD 0.8565
100 : USD 0.4659
500 : USD 0.3654
1000 : USD 0.2831

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 33
Multiples : 1
33 : USD 0.3064
50 : USD 0.2572
100 : USD 0.2202
250 : USD 0.2159

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the NTMFS4927NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS4927NT1G and other electronic components in the MOSFETs category and beyond.

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NTMFS4927N, NTMFS4927NC MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features NTMFS4927N, NTMFS4927NC MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Single Pulse DraintoSource Avalanche E 20 mJ AS Energy (T = 25C, V = 24 V, V = 20 V, J DD GS I = 20 A , L = 0.1 mH, R = 25 ) L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 6.0 JC JunctiontoAmbient Steady State (Note 3) R 46.3 JA C/W JunctiontoAmbient Steady State (Note 4) R 136.2 JA JunctiontoAmbient (t 10 s) (Note 3) R 20.7 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 30 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V VGS = 0 V, I = 8.4 A, 34 V (BR)DSSt D(aval) (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 24 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.32 1.6 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 3.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 5.8 7.3 DS(on) GS D I = 15 A 5.7 D m V = 4.5 V I = 30 A 9.6 12 GS D I = 15 A 9.2 D Forward Transconductance g V = 1.5 V, I = 15 A 40 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 913 ISS Output Capacitance C 366 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 108 RSS Capacitance Ratio C / V = 0 V, V = 15 V, f = 1 MHz 0.118 0.237 RSS GS DS C ISS 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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