NTMFS4898NFT3G ON Semiconductor

NTMFS4898NF Power MOSFET 30 V, 117 A, Single NChannel, SO8FL Features Integrated Schottky Diode Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTMFS4898NF THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 1.7 JC JunctiontoAmbient Steady State (Note 1) R 46 JA C/W JunctiontoAmbient Steady State (Note 2) R 134.2 JA JunctiontoAmbient t  10 sec R 17.3 JA 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surface mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1.0 mA 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 26 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 40 500 DSS GS J A V = 24 V DS GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 1.0 mA 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 2.2 3.0 DS(on) GS D I = 15 A 2.2 D m V = 4.5 V I = 30 A 3.4 4.8 GS D I = 15 A 3.4 D Forward Transconductance g V = 1.5 V, I = 15 A 77 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 3233 ISS Output Capacitance C 700 V = 0 V, f = 1 MHz, V = 12 V pF OSS GS DS Reverse Transfer Capacitance C 310 RSS Total Gate Charge Q 24.5 G(TOT) Threshold Gate Charge Q 3.2 G(TH) V = 4.5 V, V = 15 V; I = 30 A nC GS DS D GatetoSource Charge Q 10 GS GatetoDrain Charge Q 9 GD Total Gate Charge Q V = 10 V, V = 15 V, 49.5 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 17.6 d(ON) Rise Time t 23 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0  D G Turn Off Delay Time t 28 d(OFF) Fall Time t 8.3 f 3. Pulse Test: pulse width  300 s, duty cycle  2%. 4. Switching characteristics are independent of operating junction temperatures.