X-On Electronics has gained recognition as a prominent supplier of SZNUD3105DMT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. SZNUD3105DMT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SZNUD3105DMT1G ON Semiconductor

SZNUD3105DMT1G electronic component of ON Semiconductor
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Part No.SZNUD3105DMT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET AUTO STANDARD PART
Datasheet: SZNUD3105DMT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1811
30000 : USD 0.1737
300000 : USD 0.1702
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1884
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.3908
10 : USD 0.6787
100 : USD 0.3838
500 : USD 0.3116
1000 : USD 0.2572
3000 : USD 0.2353
6000 : USD 0.228
N/A

Obsolete
   
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We are delighted to provide the SZNUD3105DMT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SZNUD3105DMT1G and other electronic components in the MOSFETs category and beyond.

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NUD3105D Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps, and small DC motors without the need of a freewheeling diode. The device integrates all necessary items NUD3105D MAXIMUM RATINGS (T = 25C unless otherwise specified) J Symbol Rating Value Unit V Drain to Source Voltage Continuous 6.0 V DSS dc V Gate to Source Voltage Continuous 6.0 V GS dc I Drain Current Continuous 500 mA D E 50 mJ Single Pulse DraintoSource Avalanche Energy (T 25C) z Jinitial = Junction Temperature 150 C T J T Operating Ambient Temperature 40 to 85 C A T Storage Temperature Range 65 to +150 C stg P Total Power Dissipation (Note 1) 380 mW D 1.5 mW/C Derating Above 25C R Thermal Resistance JunctiontoAmbient 329 C/W JA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL STD 883, Method 3015. Machine Model Method 200 V. TYPICAL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS V Drain to Source Sustaining Voltage (Internally Clamped) 6.0 8.0 9.0 V BRDSS (I = 10 mA) D B I = 1.0 mA 8.0 V VGSO g I Drain to Source Leakage Current DSS 15 A (V = 5.5 V , V = 0 V, T = 25C) DS GS J 15 (V = 5.5 V, V = 0 V, T = 85C ) DS GS J I Gate Body Leakage Current GSS 5.0 35 A (V = 3.0 V, V = 0 V) GS DS 65 (V = 5.0 V, V = 0 V) GS DS ON CHARACTERISTICS V Gate Threshold Voltage GS(th) 0.8 1.2 1.4 V (V = V , I = 1.0 mA) GS DS D 0.8 1.4 (V = V , I = 1.0 mA, T = 85C) GS DS D J R Drain to Source OnResistance DS(on) 1.2 (I = 250 mA, V = 3.0 V) D GS 1.3 (I = 500 mA, V = 3.0 V) D GS 0.9 (I = 500 mA, V = 5.0 V) D GS 1.3 (I = 500 mA, V = 3.0 V, T = 85C) D GS J 0.9 (I = 500 mA, V = 5.0 V, T = 85C) D GS J I Output Continuous Current DS(on) 300 400 mA (V = 0.25 V, V = 3.0 V) DS GS 200 (V = 0.25 V, V = 3.0 V, T = 85C) DS GS J g Forward Transconductance 350 570 mMhos FS (V = 5.0 V, I = 0.25 A) OUT OUT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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