NUD3105D Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps, and small DC motors without the need of a freewheeling diode. The device integrates all necessary items NUD3105D MAXIMUM RATINGS (T = 25C unless otherwise specified) J Symbol Rating Value Unit V Drain to Source Voltage Continuous 6.0 V DSS dc V Gate to Source Voltage Continuous 6.0 V GS dc I Drain Current Continuous 500 mA D E 50 mJ Single Pulse DraintoSource Avalanche Energy (T 25C) z Jinitial = Junction Temperature 150 C T J T Operating Ambient Temperature 40 to 85 C A T Storage Temperature Range 65 to +150 C stg P Total Power Dissipation (Note 1) 380 mW D 1.5 mW/C Derating Above 25C R Thermal Resistance JunctiontoAmbient 329 C/W JA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL STD 883, Method 3015. Machine Model Method 200 V. TYPICAL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS V Drain to Source Sustaining Voltage (Internally Clamped) 6.0 8.0 9.0 V BRDSS (I = 10 mA) D B I = 1.0 mA 8.0 V VGSO g I Drain to Source Leakage Current DSS 15 A (V = 5.5 V , V = 0 V, T = 25C) DS GS J 15 (V = 5.5 V, V = 0 V, T = 85C ) DS GS J I Gate Body Leakage Current GSS 5.0 35 A (V = 3.0 V, V = 0 V) GS DS 65 (V = 5.0 V, V = 0 V) GS DS ON CHARACTERISTICS V Gate Threshold Voltage GS(th) 0.8 1.2 1.4 V (V = V , I = 1.0 mA) GS DS D 0.8 1.4 (V = V , I = 1.0 mA, T = 85C) GS DS D J R Drain to Source OnResistance DS(on) 1.2 (I = 250 mA, V = 3.0 V) D GS 1.3 (I = 500 mA, V = 3.0 V) D GS 0.9 (I = 500 mA, V = 5.0 V) D GS 1.3 (I = 500 mA, V = 3.0 V, T = 85C) D GS J 0.9 (I = 500 mA, V = 5.0 V, T = 85C) D GS J I Output Continuous Current DS(on) 300 400 mA (V = 0.25 V, V = 3.0 V) DS GS 200 (V = 0.25 V, V = 3.0 V, T = 85C) DS GS J g Forward Transconductance 350 570 mMhos FS (V = 5.0 V, I = 0.25 A) OUT OUT