NUP1105LT1G, SZNUP1105LT1G ESD Protection Diode Single Line CAN/LIN Bus Protector The NUP1105L has been designed to protect LIN and single line www.onsemi.com CAN transceivers from ESD and other harmful transient voltage events. This device provides bidirectional protection for the data line SOT23 BIDIRECTIONAL with a single SOT23 package, giving the system designer a low cost VOLTAGE SUPPRESSOR option for improving system reliability and meeting stringent EMI 350 W PEAK POWER requirements. Features SOT23 Package Allows One Separate Bidirectional Configuration 350 W Peak Power Dissipation per Line (8 x 20 sec Waveform) SOT23 Low Reverse Leakage Current (< 100 nA) CASE 318 IEC Compatibility: IEC 6100042 (ESD): Level 4 STYLE 27 IEC 6100044 (EFT): 40 A 5/50 ns IEC 6100045 (Lighting) 8.0 A (8/20 s) 1 PIN 1. ANODE 3 2. ANODE ISO 76371, Nonrepetitive EMI Surge Pulse TBD 3. CATHODE 2 ISO 76373, Repetitive Electrical Fast Transient (EFT) TBD EMI Surge Pulses MARKING DIAGRAM Flammability Rating UL 94 V0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and 27HM PPAP Capable These Devices are PbFree and are RoHS Compliant 1 27H = Device Code Applications M = Date Code = PbFree Package Automotive Electronics (Note: Microdot may be in either location) LIN Bus Single Line CAN Industrial Control Networks ORDERING INFORMATION Smart Distribution Systems (SDS ) Device Package Shipping DeviceNet NUP1105LT1G SOT23 3,000 / (PbFree) Tape & Reel SZNUP1105LT1G SOT23 3,000 / (PbFree) Tape & Reel NUP1105LT3G SOT23 10,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: October, 2017 Rev. 7 NUP1105L/DNUP1105LT1G, SZNUP1105LT1G MAXIMUM RATINGS (T = 25C, unless otherwise specified) J Symbol Rating Value Unit PPK Peak Power Dissipation W 8 x 20 s Double Exponential Waveform (Note 1) 350 T Operating Junction Temperature Range 55 to 150 C J T Storage Temperature Range 55 to 150 C J T Lead Solder Temperature (10 s) 260 C L ESD Human Body model (HBM) 16 kV Machine Model (MM) 400 V IEC 6100042 Specification (Contact) 30 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non-repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Symbol Parameter Test Conditions Min Typ Max Unit V Reverse Working Voltage (Note 2) 24 V RWM V Breakdown Voltage I = 1 mA (Note 3) 25.7 28.4 V BR T I Reverse Leakage Current V = 24 V 15 100 nA R RWM V Clamping Voltage I = 5 A (8 x 20 s Waveform) (Note 4) 40 V C PP V Clamping Voltage I = 8 A (8 x 20 s Waveform) (Note 4) 44 V C PP I Maximum Peak Pulse Current 8 x 20 s Waveform (Note 4) 8.0 A PP CJ Capacitance V = 0 V, f = 1 MHz (Anode to GND) 60 pF R V = 0 V, f = 1 MHz (Anode to Anode) 30 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. Pulse waveform per Figure 1. 5. Include SZ-prefix devices where applicable. www.onsemi.com 2