40 Watt Peak Power Zener Surge Protection Device SC70 Dual Common Cathode Zeners MMBZ27VCW These dual monolithic silicon zener diodes are designed for www.onsemi.com applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as 1 computers, printers, business machines, communication systems, 3 medical equipment and other applications. Their dual junction common 2 cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a PIN 1. ANODE 2. ANODE premium. 3. CATHODE Specification Features: SC70 Package Allows Either Two Separate Unidirectional MARKING Configurations or a Single Bidirectional Configuration DIAGRAM Working Peak Reverse Voltage Range 22 V Standard Zener Breakdown Voltage 27 V AC M Peak Power 40 W 1.0 ms (Bidirectional), SC70 CASE 419 per Figure 4 Waveform STYLE 4 1 ESD Rating of Class N (exceeding 16 kV) per the Human Body Model AC = Specific Device Code Low Leakage < 100 nA M = Date Code = PbFree Package Flammability Rating: UL 94 VO (Note: Microdot may be in either location) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and ORDERING INFORMATION PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Device Package Shipping Compliant MMBZ27VCWT1G SC70 3000 / Tape & (PbFree) Reel Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case SZMMBZ27VCWT1G SC70 3000 / Tape & (PbFree) Reel FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MMBZ27VCWT3G SC70 10000 / Tape & 260C for 10 Seconds (PbFree) Reel SZMMBZ27VCWT3G SC70 10000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: August, 2020 Rev. 3 MMBZ27VCW/DMMBZ27VCW MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation 1.0 ms (Note 1) T 25C P 40 Watts L pk Total Power Dissipation on FR5 Board (Note 2) T = 25C P 200 mW A D Derate above 25C 1.6 mW/C Thermal Resistance JunctiontoAmbient 618 C/W R JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 4 and derate above T = 25C per Figure 5. A 2. FR5 = 1.0 x 0.75 x 0.62 in. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I V V V C PP C BR RWM V I V R F V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I Test Current T I PP V Maximum Temperature Coefficient of V BR BR I Forward Current UniDirectional TVS F V Forward Voltage I F F ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (V = 1.1 V Max I = 200 mA) F F Breakdown Voltage V I (Note 4) C PP V (Note 3) (V) I V I V I V V BR T C PP RWM R RWM BR Device Marking Volts nA Min Nom Max mA V A mV/ C Device MMBZ27VCWT1G, SZMMBZ27VCWT1G, AC 22 50 25.65 27 28.35 1.0 38 1.0 26 MMBZ27VCWT3G, SZMMBZ27VCWT3G 3. V measured at pulse test current I at an ambient temperature of 25C. BR T 4. Surge current waveform per Figure 4 and derate per Figure 5 www.onsemi.com 2