NUP1301ML3T1G, SZNUP1301ML3T1G Low Capacitance Diode Array for ESD Protection in a Single Data Line www.onsemi.com NUP1301ML3T1G is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients for example, ESD (electrostatic discharge). Features Low Capacitance (0.9 pF Maximum) SOT23 Single Package Integration Design CASE 318 STYLE 11 Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C ANODE CATHODE Human Body Model = Class 3B 1 2 Protection for IEC6100042 (Level 4) 3 8.0 kV (Contact) CATHODE/ANODE 15 kV (Air) Ensures Data Line Speed and Integrity MARKING DIAGRAM Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground 53 M SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 PbFree Package is Available 53 = Device Code M = Date Code Applications = PbFree Package T1/E1 Secondary IC Protection (Note: Microdot may be in either location) T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection ORDERING INFORMATION Video Line Protection Device Package Shipping Microcontroller Input Protection NUP1301ML3T1G SOT23 3,000 / Base Stations (PbFree) Tape & Reel 2 I C Bus Protection SZNUP1301ML3T1G SOT23 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: October, 2016 Rev. 7 NUP1301ML3T1/DNUP1301ML3T1G, SZNUP1301ML3T1G MAXIMUM RATINGS (Each Diode) (T = 25C unless otherwise noted) J Rating Symbol Value Unit Reverse Voltage V 70 Vdc R Forward Current I 215 mAdc F Peak Forward Surge Current I 500 mAdc FM(surge) Repetitive Peak Reverse Voltage V 70 V RRM Average Rectified Forward Current (Note 1) I mA F(AV) (averaged over any 20 ms period) 715 Repetitive Peak Forward Current I 450 mA FRM NonRepetitive Peak Forward Current I A FSM 2.0 t = 1.0 s t = 1.0 ms 1.0 t = 1.0 S 0.5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient R 625 C/W JA Lead Solder Temperature T C L Maximum 10 Seconds Duration 260 Junction Temperature T 65 to 150 C J Storage Temperature T 65 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 A) 70 (BR) Reverse Voltage Leakage Current I Adc R (V = 70 Vdc) 2.5 R (V = 25 Vdc, T = 150C) 30 R J (V = 70 Vdc, T = 150C) 50 R J Diode Capacitance (between I/O and ground) C pF D (V = 0, f = 1.0 MHz) 0.9 R Forward Voltage V mV F dc (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. FR5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in, 99.5% alumina. 4. Include SZ-prefix devices where applicable. www.onsemi.com 2