USBULC6-3F3 STMicroelectronics

USBULC6-3F3K 3-line low capacitance protection for high speed USB Datasheet - production data Features Ultra low capacitance 0.85 pF Unidirectional device Low clamping factor V /V CL BR Fast response time Very thin package: 0.605 mm max Low leakage current Flip Chip (4 bumps) Benefits High ESD and EOS protection level High integration Suitable for high density boards Figure 1. Pin configuration (bump side) Complies with the following standards: AB IEC 61000-4-2 level 4 1 DataDataDataData DataDataDataData MIL STD 883G - Method 3015.7: class 3B Application GNDGNDGNDGND IDIDIDID 2 High speed USB port in wireless handsets (up to 480 Mb/s according to USB 2.0 high speed specification) Description The USBULC6-3F3K is a monolithic, application specific discrete device dedicated to ESD protection of high speed interfaces. Its ultralow line capacitance secures a high level of signal integrity without compromising the protection of downstream sensitive chips against the most stringently characterized ESD strikes. March 2014 DocID023694 Rev 1 1/10 This is information on a product in full production. www.st.com Obsolete Product(s) - Obsolete Product(s)Characteristics USBULC6-3F3K 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit V ESD discharge IEC 61000-4-2, level 4 contact discharge 8 kV PP P Peak pulse power dissipation (8/20 s) T initial = T 50 W PP j amb I Peak pulse current (8/20 s) 2.5 A PP T Maximum junction temperature 125 C j T Operating temperature range -30 to + 85 C op T Storage temperature range -55 to +150 C stg Figure 2. Electrical characteristics (definitions) I I F Symbol Parameter V = Breakdown voltage BR V I = Leakage current V F RM RM V V V CL BR RM V I V = Stand-off voltage RM RM C= I/O to GND capacitance I/O to GND Slope = 1/Rd I PP Table 2. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 - - V BR R I V = 3 V - - 100 nA RM RM Data (A1 and B1 bumps): V = 0 V DC, R - 0.85 1.2 F=1 MHz, V = 30 mV OSC C pF I/O to GND ID (B2 bump): V = 0 V DC, F = 1 MHz, R -- 3 V = 30 mV OSC RMS 2/10 DocID023694 Rev 1 Obsolete Product(s) - Obsolete Product(s)