IVN Bus Protector, Single Line LIN & Dual Line CAN NUP1128, NUP2128 The NUP1128/NUP2128 are designed to protect both CAN and LIN transceivers from ESD and other harmful transient voltage events. These devices provide bidirectional protection for each data line with www.onsemi.com a single compact SC70 (SOT323) or SOD323 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. MARKING DIAGRAMS Features Low Reverse Leakage Current (< 100 nA) SC70 XX M SZNUPH1128, SZNUP2128 175C T Devices CASE 419 J(max) Rated for High Temperature, Mission Critical and Grade 0 1 Applications IEC Compatibility: 2 SOD323 IEC 6100042 (ESD): Level 4 XX M CASE 477 IEC 6100044 (EFT): 50 A (5/50 ns) 1 IEC 6100045 (Lighting) 3.0 A (8/20 s) XX = Specific Device Code ISO 76371, Nonrepetitive EMI Surge Pulse 2, 8.0 A (1/50 s) M = Date Code ISO 76373, Repetitive Electrical Fast Transient (EFT) = PbFree Package EMI Surge Pulses, 50 A (5/50 ns) (Note: Microdot may be in either location) Flammability Rating UL 94 V0 SZ Prefix for Automotive and Other Applications Requiring Unique PIN 1 PIN 3 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable NUP1128 (SC70) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant PIN 1 PIN 2 NUP1128 Applications (SOD323) Automotive Networks CAN / CANFD PIN 1 Low and HighSpeed CAN PIN 3 Fault Tolerant CAN PIN 2 LIN NUP2128 CAN H / Single Wire LIN CAN / LIN CAN / LIN CAN L Transceiver NUP1128 NUP2128 ORDERING INFORMATION See detailed ordering, marking and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2020 Rev. 3 NUP1128/DNUP1128, NUP2128 MAXIMUM RATINGS (T = 25C, unless otherwise specified) J Symbol Rating Value Unit PPK Peak Power Dissipation, 8/20 s Double Exponential Waveform (Note 1) 165 W T Operating Junction Temperature Range C J NUP1128HT1G, SZNUP1128HT1G 55 to 150 All other devices 55 to 175 T Storage Temperature Range C J NUP1128HT1G, SZNUP1128HT1G 55 to 150 All other devices 55 to 175 T Lead Solder Temperature (10 s) 260 C L ESD Human Body Model (HBM) 8.0 kV IEC 6100042 Contact 30 kV IEC 6100042 Air 30 kV 30 kV ISO 10605 Contact (330 pF / 330 ) ISO 10605 Contact (330 pF / 2 k ) 30 kV ISO 10605 Contact (150 pF / 2 k ) 30 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Symbol Parameter Test Conditions Min Typ Max Unit V Reverse Working Voltage (Note 2) 26.5 V RWM V Breakdown Voltage I = 1 mA (Note 3) 27.5 31 35.5 V BR T I Reverse Leakage Current V = 26.5 V 1 100 nA R RWM T = 150C 150 750 A V Clamping Voltage I = 1 A (8/20 s Waveform) (Note 4) 39 47 V C PP I = 3 A 46 55 PP I Maximum Peak Pulse Current 8/20 s Waveform (Note 4) 3.0 A PP C Capacitance V = 0 V, f = 1 MHz (Line to GND) 11 13 pF J R Diode Capacitance Matching V = 0 V, f = 1 MHz (Note 5) 2 % C R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. TVS devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater than the DC RWM or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. Pulse waveform per Figure 1. 5. C is the percentage difference between C of lines 1 and 2 measured according to the test conditions given in the electrical characteristics J table. www.onsemi.com 2