SZNUP4301MR6T1G ON Semiconductor

NUP4301MR6, SZNUP4301MR6 Low Capacitance Diode Array for ESD Protection in Four Data Lines NUP4301MR6, SZNUP4301MR6 MAXIMUM RATINGS (Each Diode) (T = 25C unless otherwise noted) J Rating Symbol Value Unit Reverse Voltage V 70 Vdc R Forward Current I 200 mAdc F Peak Forward Surge Current I 500 mAdc FM(surge) Repetitive Peak Reverse Voltage V 70 V RRM Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) I 715 mA F(AV) Repetitive Peak Forward Current I 450 mA FRM NonRepetitive Peak Forward Current I A FSM t = 1.0 s 2.0 t = 1.0 ms 1.0 t = 1.0 S 0.5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R 556 C/W JA Lead Solder Temperature, Maximum 10 Seconds Duration T 260 C L Junction Temperature T 40 to +150 C J Storage Temperature T 55 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 A) 70 (BR) Reverse Voltage Leakage Current I Adc R (V = 70 Vdc) 2.5 R (V = 25 Vdc, T = 150C) 30 R J (V = 70 Vdc, T = 150C) 50 R J Capacitance (between I/O pins) C pF D (V = 0 V, f = 1.0 MHz) 0.8 1.5 R Capacitance (between I/O pin and ground) C pF D (V = 0 V, f = 1.0 MHz) 1.6 3 R Forward Voltage V mV F dc (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Include SZ-prefix devices where applicable.