NUP3112UPMU, SZNUP3112UPMU ESD Protection Diode Array Quad, UltraLow Capacitance The threeline voltage transient suppressor array is designed to protect voltagesensitive components that require ultralow capacitance from www.onsemi.com ESD and transient voltage events. This device features a common anode design which protects three independent high speed data lines and a V CC D D D V 1 2 3 CC power line in a single sixlead UDFN low profile package. Excellent clamping capability, low capacitance, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as a USB 2.0 high speed. Features Low Capacitance Data Lines (0.7 pF Typical) Protects up to Three Data Lines Plus a V Pin CC MARKING UDFN Package, 1.6 x 1.6 mm DIAGRAM Low Profile of 0.50 mm for Ultra Slim Design 1 UDFN6 1.6x1.6 6 ESD Rating: IEC6100042: Level 4 P5 M MU SUFFIX Contact (14 kV) CASE 517AP 1 V Pin = 15 V Protection CC P5 = Specific Device Code D , D , and D Pins = 5.2 V Minimum Protection 1 2 3 M = Date Code SZ Prefix for Automotive and Other Applications Requiring Unique = PbFree Package Site and Control Change Requirements AECQ101 Qualified and (Note: Microdot may be in either location) PPAP Capable This is a PbFree Device PIN CONNECTIONS Typical Applications USB 2.0 HighSpeed Interface 6 V D 1 CC 1 Cell Phones GND 2 5 NC D MP3 Players 2 SIM Card Protection D 3 4 NC 3 MAXIMUM RATINGS (T = 25C, unless otherwise specified) J Symbol Rating Value Unit T Operating Junction Temperature Range 40 to 125 C J ORDERING INFORMATION T Storage Temperature Range 55 to 150 C STG T Lead Solder Temperature Maximum 260 C L Device Package Shipping (10 seconds) NUP3112UPMUTAG UDFN6 3000 / Tape & ESD IEC 6100042 Contact 14000 V (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be SZNUP3112UPMUTAG UDFN6 3000 / Tape & assumed, damage may occur and reliability may be affected. (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2017 Rev. 2 NUP3112UPMU/DNUP3112UPMU, SZNUP3112UPMU ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V V V V R RWM C BR RWM V I V R F V Breakdown Voltage I I BR T T I Test Current T I Forward Current F V Forward Voltage I F F I PP P Peak Power Dissipation pk C Max. Capacitance V = 0 and f = 1.0 MHz UniDirectional R ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (D , D , and D ) (Note 1) V 4.0 V 1 2 3 RWM1 Reverse Working Voltage (V ) (Note 1) V 12 V 1 RWM2 Breakdown Voltage (D , D , and D ) I = 1 mA, (Note 2) V 5.2 5.5 V 1 2 3 T BR Breakdown Voltage (V ) I = 5 mA, (Note 2) V 13.5 15 15.8 V CC T BR2 Reverse Leakage Current (D , D , and D ) V I 1.0 A 1 2 3 RWM R Reverse Leakage Current (V ) V I 1.0 A CC RWM2 R Capacitance (D , D , and D ) V = 0 V, f = 1 MHz (Line to GND) C 0.7 0.9 pF 1 2 3 R J 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2