RSB6.8JS2FHT2R ROHM

Data Sheet AEC-Q101 Qualified Ultra Low Capacitance ESD Protection Diode RSB6.8JS2FH RSD6.8JS2 lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) ESD Protection 1 .6 0 .1 0 .2 2 0 .0 5 0 .1 3 0 .0 5 lFeatures 1)Ultra small mold type. (EMD6) 2)Ultra Low Capacitance 3)Bi direction 4)High reliability 0 0 .1 EMD6 lConstruction lStructure (6) (5) (4) 1 .0 0 .1 0 .5 0 .0 5 Silicon epitaxial planer ROHM : EMD6 JEITA : SC-75A Size dot (year week factory) (1) (2) (3) *Please make 3 and 6 Pin open in circuit upon lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Power dissipation 150 P mW/Total Junction temperature Tj 150 C Storage temperature C Tstg -55 to +150 lElectrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V Zener voltage 6.0 - 8.0 V I =5mA Z Z I V =3.5V Reverse current - - 0.50 A R R Capacitance between terminals C - 1 - pF f=1MHz,V =0V R t *Rating of per diode. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.A 1/3 1 .2 0 .1 1 .6 0 .1 Data Sheet RSB6.8JS2FH 10 100000 10000 Ta=125 C Ta=-25 C 1 1000 Ta=75 C Ta=125 C 100 Ta=25 C Ta=75 C 0.1 10 Ta=25 C 1 0.01 0.1 6.5 7 7.5 8 8.5 0 1 2 3 4 5 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGE V (V) R Vz-Iz CHARACTERISTICS V -I CHARACTERISTICS R R 8 10 f=1MHz 7.95 Ta=25 C I =5mA Z 7.9 n=30pcs 7.85 7.8 1 7.75 AVE:7.64V 7.7 7.65 7.6 7.55 0.1 7.5 0 1 2 3 4 5 Vz DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 5 2 4.5 1.8 Ta=25 C Ta=25 C f=1MHz V =3.5V R 4 1.6 n=30pcs V =0V R n=10pcs 3.5 1.4 3 1.2 AVE:1.16pA 1 2.5 AVE:1.4pF 2 0.8 1.5 0.6 1 0.4 0.5 0.2 0 0 I DISPERSION MAP R Ct DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.A 2/3 CAPACITANCE BETWEEN REVERSE CURRENT:I (pA) R ZENER CURRENT:Iz(mA) TERMINALS:Ct(pF) ZENER VOLTAGE:Vz( ) CAPACITANCE BETWEENTERMINALS:Ct(pF) REVERSE CURRENT:I (pA) R