X-On Electronics has gained recognition as a prominent supplier of RSD046P05TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSD046P05TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSD046P05TL ROHM

RSD046P05TL electronic component of ROHM
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See Product Specifications
Part No.RSD046P05TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4V Drive Pch MOSFET Drive Pch
Datasheet: RSD046P05TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
111: USD 0.3672 ea
Line Total: USD 40.76 
Availability - 0
MOQ: 111  Multiples: 111
Pack Size: 111
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.603
10 : USD 0.5339
100 : USD 0.3734
500 : USD 0.3199
1000 : USD 0.2809
2500 : USD 0.262
5000 : USD 0.253
10000 : USD 0.2485
25000 : USD 0.2463

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 125
Multiples : 1
125 : USD 0.315
500 : USD 0.3009
1000 : USD 0.2961
2000 : USD 0.2946
2500 : USD 0.293

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 158
Multiples : 1
158 : USD 0.6522
250 : USD 0.6261
500 : USD 0.6034
1000 : USD 0.5838

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2
Multiples : 1
2 : USD 77.5562

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 111
Multiples : 111
111 : USD 0.3672
200 : USD 0.3657
500 : USD 0.351
1000 : USD 0.3445

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Continuous Drain Current
Power Dissipation
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Polarity
Drain-Source On-Volt
Package Type
Number Of Elements
Gate-Source Voltage Max
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSD046P05TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSD046P05TL and other electronic components in the MOSFETs category and beyond.

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RSD046P05 Pch 45V 4.5A Power MOSFET Datasheet Outline V 45V DSS CPT3 (SC-63) R (Max.) 155m DS(on) <SOT-428> I 4.5A D (2) (1) (3) P 15W D Features Inner circuit 1) Low on-resistance. 1 (1) Gate 2) Fast switching speed. (2) Drain 2 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. 1 ESD PROTECTION DIODE (1) (2) (3) 2 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking 046P05 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V 45 DSS *1 T = 25C I 4.5 A c D Continuous drain current *1 T = 100C I 2.4 A c D *2 Pulsed drain current A I 9.0 D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse 14.3 mJ E AS *3 Avalanche current I 4.5 A AR T = 25C P 15 W c D Power dissipation T = 25C P 0.85 W a D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.D 1/12 Not Recommended for New DesignsData Sheet RSD046P05 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 8.33 C/W Thermal resistance, junction - case thJC Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown voltage V V = 0V, I = 1mA 45 - - V (BR)DSS GS D V = 45V, V = 0V DS GS - - 1 T = 25C j Zero gate voltage drain current I A DSS V = 45V, V = 0V DS GS - - 100 T = 125C j I V = 20V, V = 0V Gate - Source leakage current -- 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA - V 1 3 GS (th) DS D V = 10V, I = 4.5A - 110 155 GS D V = 4.5V, I = 4.5A - 160 225 GS D Static drain - source *4 R V = 4.0V, I = 4.5A - 185 260 m DS(on) GS D on - state resistance V = 10V, I = 4.5A GS D - 180 250 T = 125C j g V = 10V, I = 4.5A Forward transfer admittance 36 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.D 2/12 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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