RSD140P06TL ROHM

Data Sheet 4V Drive Pch MOSFET RSD140P06 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET CPT3 (SC-63) <SOT-428> Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Basic ordering unit (pieces) 2500 2 RSD140P06 (1) (2) (3) (1) Gate 1 ESD PROTECTION DIODE (2) Drain (3) Source 2 BODY DIODE Absolute maximum ratings (T = 25C) a Parameter Symbol Limits Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GSS Continuous I 14 A D Drain current *1 Pulsed I 28 A DP Source current Continuous I 14 A S *1 (Body Diode) Pulsed I 28 A SP *2 Power dissipation P 20 W D Channel temperature T 150 C ch Range of storage temperature T 55 to 150 C stg *1 Pw10s, Duty cycle1% *2 T =25C c Thermal resistance Parameter Symbol Limits Unit * Channel to Case R 6.25 C / W th (ch-c) * T =25C c www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/6 Not Recommended for New DesignsData Sheet RSD140P06 Electrical characteristics (T = 25C) a Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 60 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =60V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 3.0 V V =10V, I =1mA GS (th) DS D -60 84 I =14A, V =10V D GS Static drain-source on-state * R m DS (on) - 73 103 I =14A, V =4.5V D GS resistance - 77 108 I =-14A, V =-4.0V D GS * Forward transfer admittance l Y l10 - - S I =14A, V =10V fs D DS Input capacitance C - 1900 - pF V =10V iss DS Output capacitance C - 200 - pF V =0V oss GS Reverse transfer capacitance C - 100 - pF f=1MHz rss Turn-on delay time t * - 20 - ns I =7.0A, V 30V d(on) D DD Rise time t * - 45 - ns V =10V r GS Turn-off delay time t * - 240 - ns R =4.3 d(off) L * Fall time t - 110 - ns R =10 f G * Total gate charge Q - 27 - nC V 30V g DD * Gate-source charge Q - 4.5 - nC I =14A, gs D Gate-drain charge Q * - 5.0 - nC V =10V gd GS *Pulsed Body diode characteristics (Source-Drain) (T = 25 C) a Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I =14A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A Not Recommended for New Designs