Data Sheet 4V Drive Nch MOSFET RSD200N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) <SOT-428> Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Basic ordering unit (pieces) 2500 2 RSD200N05 (1) (2) (3) (1) Gate (2) Drain 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 45 V DSS Gate-source voltage V 20 V GSS Continuous I 20 A D Drain current *1*1 Pulsed I 40 A DP Continuous I 16 A Source current S *1 (Body Diode) Pulsed I 40 A SP *2 Power dissipation P 20 W D Channel temperature T 150 C ch Range of storage temperature T 55to 150 C stg *1 Pw10s, Duty cycle1% *2 T =25C c Thermal resistance Parameter Symbol Limits Unit * Channel to Case R 6.25 C / W th (ch-c) * T =25C c www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/6 Not Recommended for New DesignsData Sheet RSD200N05 Electrical characteristics (T = 25C) a Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 45 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =45V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -20 28 I =20A, V =10V D GS Static drain-source on-state * R DS (on) -25 35 m I =20A, V =4.5V D GS resistance -28 40 I =20A, V =4.0V D GS ** Forward transfer admittance l Y l10 - - S I =20A, V =10V fs D DS Input capacitance C - 950 - pF V =10V iss DS Output capacitance C - 250 - pF V =0V oss GS Reverse transfer capacitance C - 120 - pF f=1MHz rss Turn-on delay time t - 10 - ns I =10A, V 25V ** d(on) D DD Rise time t ** - 20 - ns V =10V r GS Turn-off delay time t ** - 50 - ns R =2.5 d(off) L ** Fall time t - 20 - ns R =10 f G ** Total gate charge Q - 12 - nC V 25V g DD Gate-source charge Q ** - 3.5 - nC I =20A, gs D Gate-drain charge Q ** - 4.0 - nC V =5V gd GS *Pulsed Body diode characteristics (Source-Drain) (T = 25 C) a Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =20A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A Not Recommended for New Designs