X-On Electronics has gained recognition as a prominent supplier of RSD221N06TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSD221N06TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSD221N06TL ROHM

RSD221N06TL electronic component of ROHM
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Part No.RSD221N06TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET N-CH 60V 22A
Datasheet: RSD221N06TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
106: USD 1.0083 ea
Line Total: USD 106.88 
Availability - 7081
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 106  Multiples: 1
Pack Size: 1
Availability Price Quantity
7081
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 106
Multiples : 1
106 : USD 1.0083
250 : USD 0.9679
500 : USD 0.933
1000 : USD 0.9026
2500 : USD 0.8758
5000 : USD 0.8523

2425
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 106
Multiples : 1
106 : USD 1.0083
250 : USD 0.9679
500 : USD 0.933
1000 : USD 0.9026
2500 : USD 0.8758

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Cnhts
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Mxhts
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We are delighted to provide the RSD221N06TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSD221N06TL and other electronic components in the MOSFETs category and beyond.

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RSD221N06 Nch 60V 22A Power MOSFET Datasheet Outline V 60V DSS CPT3 (SC-63) R (Max.) 26m DS(on) <SOT-428> (3) I 22A D (2) (1) P 20W D Features Inner circuit (3) 1) Low on-resistance. (1) Gate 1 2) Fast switching speed. (2) Drain (3) Source (1) 3) Drive circuits can be simple. 2 1 ESD PROTECTION DIODE 4) Parallel use is easy. 2 BODY DIODE 5) Pb-free lead plating RoHS compliant (2) 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking 221N06 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS *1 T = 25C I 22 A c D Continuous drain current *1 T = 100C I 11 A c D *2 Pulsed drain current A I 44 D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse 17.8 mJ E AS *3 Avalanche current I 22 A AR T = 25C P 20 W c D Power dissipation T = 25C P 0.85 W a D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.C 1/12 Not Recommended for New DesignsData Sheet RSD221N06 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 6.25 C/W Thermal resistance, junction - case thJC Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown voltage V V = 0V, I = 1mA 60 - - V (BR)DSS GS D V = 60V, V = 0V DS GS - -1 T = 25C j Zero gate voltage drain current I A DSS V = 60V, V = 0V DS GS - - 100 T = 125C j I V = 20V, V = 0V Gate - Source leakage current -- 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 3.0 V GS (th) DS D V = 10V, I = 22A -18 26 GS D V = 4.5V, I = 22A -21 30 GS D Static drain - source *4 V = 4.0V, I = 22A R -23 33 m GS D DS(on) on - state resistance V = 10V, I = 22A GS D -32 45 T = 125C j g V = 10V, I = 22A Forward transfer admittance 12 24 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.C 2/12 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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