X-On Electronics has gained recognition as a prominent supplier of RSL020P03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSL020P03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSL020P03TR ROHM

RSL020P03TR electronic component of ROHM
RSL020P03TR ROHM
RSL020P03TR MOSFETs
RSL020P03TR  Semiconductors

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See Product Specifications
Part No. RSL020P03TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -2A
Datasheet: RSL020P03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6337 ea
Line Total: USD 0.63 
Availability - 2763
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2763
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.6337
10 : USD 0.5513
100 : USD 0.3663
500 : USD 0.2959
1000 : USD 0.2354
3000 : USD 0.198
9000 : USD 0.1903
24000 : USD 0.1892
45000 : USD 0.1859

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSL020P03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSL020P03TR and other electronic components in the MOSFETs category and beyond.

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RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT6 z Features 1) Low On-resistance. 2) High speed switching. zApplications Abbreviated symbol : SL Switching z Packaging specifications z Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 3000 2 RSL020P03 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage V 20 V GSS Continuous ID 2 A Drain current 1 Pulsed IDP 8 A Source current Continuous IS 0.8 A (Body diode) 1 Pulsed I 8 A SP 2 Total power dissipation PD 1 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 125 C/W Mounted on a ceramic board Rev.B 1/4 0.2Max.RSL020P03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS= 20V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 80 120 m I = 2A, V = 10V D GS Static drain-source on-state RDS (on) 125 190 m ID=1A, VGS= 4.5V resistance 140 210 m ID= 1A, VGS= 4.0V Forward transfer admittance Yfs 1.4 SVDS= 10V, ID= 1A Input capacitance C 350 pF V = 10V iss DS Output capacitance Coss 80 pF VGS=0V Reverse transfer capacitance Crss 50 pF f=1MHz Turn-on delay time t 11 ns VDD 15V d (on) ID= 1A Rise time tr 11 ns VGS= 10V Turn-off delay time td (off) 35 ns RL=15 Fall time tf 11 ns RG =10 Q 3.9 nC V 15V V = 5V Total gate charge g DD GS ID= 2A Gate-source charge Qgs 1.3 nC RL=7.5 RG =10 Gate-drain charge Qgd1.1 nC Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.8A, VGS=0V Rev.B 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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