X-On Electronics has gained recognition as a prominent supplier of RSR020P03TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSR020P03TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSR020P03TL ROHM

RSR020P03TL electronic component of ROHM
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See Product Specifications
Part No.RSR020P03TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET P-CH 30V 2A TSMT3
Datasheet: RSR020P03TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5302 ea
Line Total: USD 0.53 
Availability - 167
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
167
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5302
10 : USD 0.4653
100 : USD 0.3245
500 : USD 0.319
3000 : USD 0.2728

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSR020P03TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSR020P03TL and other electronic components in the MOSFETs category and beyond.

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0~0.1 RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) z Features 3 1) Low On-resistance 2) Space savingsmall surface mount package (TSMT3) (1) (2) 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : WZ zApplications (3) Drain Switching z Packaging specifications z Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 RSR020P03 (1) 2 1 (2) (1) Gate (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit 30 Drain-source voltage VDSS V 20 Gate-source voltage VGSS V Continuous I 2 A D Drain current 1 8 Pulsed IDP A 0.8 Source current Continuous IS A (Body diode) 1 8 Pulsed ISP A 2 Total power dissipation P 1 W D 150 Channel temperature Tch C 55 to +150 Range of storage temperature Tstg C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 125 C/W Mounted on a ceramic board Rev.A 1/4 Not Recommended for New Designs 1.6 2.8 0.3~0.6RSR020P03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 85 120 m I = 2A, V = 10V D GS Static drain-source on-state RDS (on) 135 190 m ID= 1A, VGS= 4.5V resistance 150 210 m ID= 1A, VGS= 4V Forward transfer admittance Yfs 1.4 SVDS= 10V, ID= 1A Input capacitance C 370 pF V = 10V iss DS Output capacitance Coss 80 pF VGS=0V Reverse transfer capacitance Crss 55 pF f=1MHz Turn-on delay time t 8 ns VDD 15V d (on) ID= 1A Rise time tr 10 ns VGS= 10V Turn-off delay time td (off) 35 ns RL=15 Fall time tf 11 ns RG=10 Q 4.3 nC V 15V VGS= 5V Total gate charge g DD I = 2A Gate-source charge Qgs 1.4 nC D RG=10 Gate-drain charge Qgd1.5 nC RL=7.5 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 0.8A, V =0V S GS Pulsed Rev.A 2/4 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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