RSR020P03TL ROHM

0~0.1 RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) z Features 3 1) Low On-resistance 2) Space savingsmall surface mount package (TSMT3) (1) (2) 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : WZ zApplications (3) Drain Switching z Packaging specifications z Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 RSR020P03 (1) 2 1 (2) (1) Gate (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit 30 Drain-source voltage VDSS V 20 Gate-source voltage VGSS V Continuous I 2 A D Drain current 1 8 Pulsed IDP A 0.8 Source current Continuous IS A (Body diode) 1 8 Pulsed ISP A 2 Total power dissipation P 1 W D 150 Channel temperature Tch C 55 to +150 Range of storage temperature Tstg C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 125 C/W Mounted on a ceramic board Rev.A 1/4 Not Recommended for New Designs 1.6 2.8 0.3~0.6RSR020P03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 85 120 m I = 2A, V = 10V D GS Static drain-source on-state RDS (on) 135 190 m ID= 1A, VGS= 4.5V resistance 150 210 m ID= 1A, VGS= 4V Forward transfer admittance Yfs 1.4 SVDS= 10V, ID= 1A Input capacitance C 370 pF V = 10V iss DS Output capacitance Coss 80 pF VGS=0V Reverse transfer capacitance Crss 55 pF f=1MHz Turn-on delay time t 8 ns VDD 15V d (on) ID= 1A Rise time tr 10 ns VGS= 10V Turn-off delay time td (off) 35 ns RL=15 Fall time tf 11 ns RG=10 Q 4.3 nC V 15V VGS= 5V Total gate charge g DD I = 2A Gate-source charge Qgs 1.4 nC D RG=10 Gate-drain charge Qgd1.5 nC RL=7.5 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 0.8A, V =0V S GS Pulsed Rev.A 2/4 Not Recommended for New Designs