Product Information

RSR025P03FRATL

RSR025P03FRATL electronic component of ROHM

Datasheet
MOSFET, AECQ101, P-CH, -30V, -2.5A, TSMT
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8016 ea
Line Total: USD 0.8

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.8016
10 : USD 0.614
100 : USD 0.472
500 : USD 0.3975
1000 : USD 0.3496
5000 : USD 0.3301

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
LoadingGif

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Additional Infomation About Product

0~0.1 RSR025P03FRA RSR025P03 Transistors AEC-Q101 Qualified 4V Drive Pch MOSFET RSR025P03RSR025P03FRA z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) z Features 1) Low On-resistance 2) Space savingsmall surface mount package (TSMT3) (1) (2) 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : WY zApplications (3) Drain Switching z Packaging specifications z Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 RSR025P03FRARSR025P03 (1) 2 1 (1) Gate (2) (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS 20 Gate-source voltage VGSS V 2.5 Continuous ID A Drain current 1 Pulsed IDP 10 A Source current Continuous I 0.8 A S 1 (Body diode) 10 Pulsed ISP A 2 1 Total power dissipation PD W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle 1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Rth(ch-a) 125 C/W Channel to ambient Mounted on a ceramic board Rev.A 1/4 1.6 2.8 0.3~0.6RSR025P03FRARSR025P03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI =1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 70 98 m ID=2.5A, VGS=10V Static drain-source on-state R 100 140 m I =1.2A, V =4.5V DS (on) D GS resistance 115 160 m ID=1.2A, VGS=4V Forward transfer admittance Yfs 1.6 SVDS=10V, ID=1.2A Input capacitance C 460 pF V =10V iss DS Output capacitance Coss 105 pF VGS=0V Reverse transfer capacitance Crss 65 pF f=1MHz Turn-on delay time td (on) 10 ns VDD 15V ID=1.2A Rise time tr 10 ns VGS=10V Turn-off delay time td (off) 42 ns RL=12.5 Fall time tf 10 ns RGS=10 Total gate charge Q 5.4 nC V 15V VGS=5V g DD ID=2.5A Gate-source charge Qgs 1.4 nC RL=6 RG=10 Gate-drain charge Qgd 1.6 nC Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=0.8A, VGS=0V Rev.A 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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