0~0.1 RSR025P03FRA RSR025P03 Transistors AEC-Q101 Qualified 4V Drive Pch MOSFET RSR025P03RSR025P03FRA z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) z Features 1) Low On-resistance 2) Space savingsmall surface mount package (TSMT3) (1) (2) 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : WY zApplications (3) Drain Switching z Packaging specifications z Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 RSR025P03FRARSR025P03 (1) 2 1 (1) Gate (2) (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS 20 Gate-source voltage VGSS V 2.5 Continuous ID A Drain current 1 Pulsed IDP 10 A Source current Continuous I 0.8 A S 1 (Body diode) 10 Pulsed ISP A 2 1 Total power dissipation PD W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle 1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Rth(ch-a) 125 C/W Channel to ambient Mounted on a ceramic board Rev.A 1/4 1.6 2.8 0.3~0.6RSR025P03FRARSR025P03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI =1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 70 98 m ID=2.5A, VGS=10V Static drain-source on-state R 100 140 m I =1.2A, V =4.5V DS (on) D GS resistance 115 160 m ID=1.2A, VGS=4V Forward transfer admittance Yfs 1.6 SVDS=10V, ID=1.2A Input capacitance C 460 pF V =10V iss DS Output capacitance Coss 105 pF VGS=0V Reverse transfer capacitance Crss 65 pF f=1MHz Turn-on delay time td (on) 10 ns VDD 15V ID=1.2A Rise time tr 10 ns VGS=10V Turn-off delay time td (off) 42 ns RL=12.5 Fall time tf 10 ns RGS=10 Total gate charge Q 5.4 nC V 15V VGS=5V g DD ID=2.5A Gate-source charge Qgs 1.4 nC RL=6 RG=10 Gate-drain charge Qgd 1.6 nC Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=0.8A, VGS=0V Rev.A 2/4