X-On Electronics has gained recognition as a prominent supplier of RT1E040RPTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RT1E040RPTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RT1E040RPTR ROHM

RT1E040RPTR electronic component of ROHM
RT1E040RPTR ROHM
RT1E040RPTR MOSFETs
RT1E040RPTR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RT1E040RPTR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4V Drive Pch MOSFET Drive Pch
Datasheet: RT1E040RPTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.6389
10 : USD 0.6152
100 : USD 0.5796
500 : USD 0.558
1000 : USD 0.4565
3000 : USD 0.1845
9000 : USD 0.1781
24000 : USD 0.1737
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RT1E040RPTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RT1E040RPTR and other electronic components in the MOSFETs category and beyond.

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RT1E040RP Pch -30V -4A Power MOSFET Datasheet lOutline (8) V -30V (7) DSS TSST8 (6) R (Max.) 45mW (5) DS(on) (1) I -4A D (2) (3) P 1.25W (4) D lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Source 2) Built-in G-S Protection Diode. (2) Drain (6) Drain (3) Drain (7) Drain 3) Small Surface Mount Package (TSST8). (4) Gate (8) Drain 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking UG lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V -30 DSS *1 Continuous drain current I 4 A D *2 Pulsed drain current A I 16 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.55 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.B 1/11Data Sheet RT1E040RP lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 C/W thJA Thermal resistance, junction - ambient *4 R - - 227 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V Breakdown voltage I = -1mA (BR)DSS D - -25 - mV/C temperature coefficient T referenced to 25C j I V = -30V, V = 0V Zero gate voltage drain current - - -1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = -10V, I = -1mA Gate threshold voltage -1 - -2.5 V GS (th) DS D V I = -1mA Gate threshold voltage (GS)th D - 3.9 - mV/C temperature coefficient T referenced to 25C j V = -10V, I = -4A - 32 45 GS D V = -4.5V, I = -2A - 45 63 GS D Static drain - source *5 R mW DS(on) on - state resistance V = -4.0V, I = -2A - 52 72 GS D V = -10V, I = -4A, T =125C - 47 66 GS D j R Gate input resistannce f = 1MHz, open drain - 13 - W G *5 Transconductance V = -10V, I = -4A 2.7 7.0 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (20200.8mm) *5 Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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