X-On Electronics has gained recognition as a prominent supplier of RTF015N03TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTF015N03TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTF015N03TL ROHM

RTF015N03TL electronic component of ROHM
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Part No.RTF015N03TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET N-CH 30V 1.5A TUMT3
Datasheet: RTF015N03TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.108 ea
Line Total: USD 0.11 
Availability - 697
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
697
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.108
10 : USD 0.0952
30 : USD 0.0896
100 : USD 0.0829
500 : USD 0.0798
1000 : USD 0.0779

2823
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 164
Multiples : 1
164 : USD 0.2487
200 : USD 0.247
500 : USD 0.2097
1000 : USD 0.1983

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
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Rds On
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We are delighted to provide the RTF015N03TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTF015N03TL and other electronic components in the MOSFETs category and beyond.

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RTF015N03 Datasheet Nch 30V 1.5A Middle Power MOSFET llOutline SOT-323T V 30V DSS R (Max.) 240m DS(on) TUMT3 I 1.5A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) 2.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT3). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking PP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6.0 A DP V Gate - Source voltage 12 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20151109 - Rev.001 Not Recommended for New Designs RTF015N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 1.5A - 170 240 GS D Static drain - source *4 R V = 4.0V, I = 1.5A - 180 250 m DS(on) GS D on - state resistance V = 2.5V, I = 1.5A - 240 340 GS D R Gate resistance f = 1MHz, open drain - 17 - G Forward Transfer *4 Y V = 10V, I = 1.5A 1.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20151109 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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