RT1A040ZPTR ROHM

1.5V Drive Pch MOSFET RT1A040ZP z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) z Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol : YE Each lead has same dimensions z Applications Switching z Packaging specifications z Equivalent circuit Package Taping (8) (7) (6) (5) Type Code TR 2 Basic ordering unit(piecies) 3000 RT1A040ZP 1 (1) Drain (2) Drain (3) Drain (4) Gate (5) Source (1) (2) (3) (4) (6) Drain (7) Drain *1 ESD PROTECTION DIODE (8) Drain *2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 12 V DSS Gate-source voltage VGSS 10 V Continuous ID 4 A Drain current 1 Pulsed IDP 16 A Continuous IS 1 A Source current 1 (Body diode) Pulsed I 16 A SP 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Range of Storage temerature Tstg 55 to +150 C 1 Pw 10s, Duty cycle 1% 2 When mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 100 C / W When mounted on a ceramic board www.rohm.com c 2009.01 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/5 RT1A040ZP Data Sheet z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 12 VID= 1mA, VGS=0V Zero gete voltage drain current IDSS 1 AVDS= 12V, VGS=0V Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 6V, ID= 1mA 22 30 m ID= 4A, VGS= 4.5V Static drain-source on-state 30 42 m ID= 2A, VGS= 2.5V RDS (on) resistance 40 60 m ID= 2A, VGS= 1.8V 55 110 m ID= 0.8A, VGS= 1.5V Forward transfer admittance Yfs 6.5 SVDS= 6V, ID= 4A Input capacitance Ciss 2350 pF VDS= 6V Output capacitance Coss 310 pF VGS=0V Reverse transfer capacitance Crss 280 pF f=1MHz Turn-on delay time td (on) 11 ns VDD 6V ID= 2A Rise time tr 70 ns VGS= 4.5V Turn-off delay time td (off) 380 ns RL 3 Fall time tf 210 ns RG=10 Total gate charge Q 30 nC V 6V RL 1.5 g DD Gate-source charge Qgs 4.0 nC ID= 4A RG=10 Gate-drain charge Qgd3.5 nC VGS= 4.5V Pulsed z Body diode characteristics (Source -drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 4A, V =0V S GS Pulsed www.rohm.com c 2009.01 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 2/5