X-On Electronics has gained recognition as a prominent supplier of RT1A040ZPTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RT1A040ZPTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RT1A040ZPTR ROHM

RT1A040ZPTR electronic component of ROHM
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See Product Specifications
Part No.RT1A040ZPTR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET P Chan-12V-4A Mid-PowerSwitching
Datasheet: RT1A040ZPTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.7829
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.386
6000 : USD 0.3574
9000 : USD 0.3574
12000 : USD 0.3574
15000 : USD 0.3574
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.359
6000 : USD 0.359
9000 : USD 0.3439
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RT1A040ZPTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RT1A040ZPTR and other electronic components in the MOSFETs category and beyond.

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1.5V Drive Pch MOSFET RT1A040ZP z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) z Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol : YE Each lead has same dimensions z Applications Switching z Packaging specifications z Equivalent circuit Package Taping (8) (7) (6) (5) Type Code TR 2 Basic ordering unit(piecies) 3000 RT1A040ZP 1 (1) Drain (2) Drain (3) Drain (4) Gate (5) Source (1) (2) (3) (4) (6) Drain (7) Drain *1 ESD PROTECTION DIODE (8) Drain *2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 12 V DSS Gate-source voltage VGSS 10 V Continuous ID 4 A Drain current 1 Pulsed IDP 16 A Continuous IS 1 A Source current 1 (Body diode) Pulsed I 16 A SP 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Range of Storage temerature Tstg 55 to +150 C 1 Pw 10s, Duty cycle 1% 2 When mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 100 C / W When mounted on a ceramic board www.rohm.com c 2009.01 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/5 RT1A040ZP Data Sheet z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 12 VID= 1mA, VGS=0V Zero gete voltage drain current IDSS 1 AVDS= 12V, VGS=0V Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 6V, ID= 1mA 22 30 m ID= 4A, VGS= 4.5V Static drain-source on-state 30 42 m ID= 2A, VGS= 2.5V RDS (on) resistance 40 60 m ID= 2A, VGS= 1.8V 55 110 m ID= 0.8A, VGS= 1.5V Forward transfer admittance Yfs 6.5 SVDS= 6V, ID= 4A Input capacitance Ciss 2350 pF VDS= 6V Output capacitance Coss 310 pF VGS=0V Reverse transfer capacitance Crss 280 pF f=1MHz Turn-on delay time td (on) 11 ns VDD 6V ID= 2A Rise time tr 70 ns VGS= 4.5V Turn-off delay time td (off) 380 ns RL 3 Fall time tf 210 ns RG=10 Total gate charge Q 30 nC V 6V RL 1.5 g DD Gate-source charge Qgs 4.0 nC ID= 4A RG=10 Gate-drain charge Qgd3.5 nC VGS= 4.5V Pulsed z Body diode characteristics (Source -drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 4A, V =0V S GS Pulsed www.rohm.com c 2009.01 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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