RTF010P02TL ROHM

RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 z Dimensions (Unit : mm) z Structure Silicon P-channel TUMT3 MOSFET z Features 1) Low on-resistance. (570m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate 4) Low voltage drive. (2.5V) (2) Source Abbreviated symbol : WQ (3) Drain z Applications DC-DC converter z Packaging specifications z Equivalent circuit Package Taping (3) Type Code TL 3000 Basic ordering unit (pieces) RTF010P02 (1) 2 1 (2) (1) Gate (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 12 V I 1 A Continuous D Drain current 1 Pulsed IDP 4 A 1 Source current Continuous IS 0.4 A (Body diode) Pulsed ISP 4 A 2 Total power dissipation P 0.8 W D Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 156 C / W Mounted on a ceramic board. Rev.C 1/4 Not Recommended for New Designs 0.2Max.RTF010P02 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V 20 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 20V, VGS=0V Gate threshold voltage VGS (th) 0.7 2.0 V VDS= 10V, ID= 1mA 280 390 m I = 1A, V = 4.5V D GS Static drain-source on-state RDS (on) 310 430 m ID= 1A, VGS= 4V resistance 570 800 m ID= 0.5A, VGS= 2.5V Forward transfer admittance Yfs 0.7 SVDS= 10V, ID= 0.5A Input capacitance C 150 pF V = 10V iss DS Output capacitance Coss 20 pF VGS=0V Reverse transfer capacitance Crss 20 pF f=1MHz Turn-on delay time t 9 ns ID= 0.5A d (on) VDD 15V Rise time tr 8 ns VGS= 4.5V Turn-off delay time td (off) 25 ns RL=30 Fall time tf 10 ns RG=10 Q 2.1 nC V 15V RL=15 Total gate charge g DD Gate-source charge Qgs 0.5 nC VGS= 4.5V RG=10 Gate-drain charge Qgd0.5 nC ID= 1A Pulsed z Body diode characteristics (Source -drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.4A, VGS=0V Rev.C 2/4 Not Recommended for New Designs