X-On Electronics has gained recognition as a prominent supplier of RTF015P02TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTF015P02TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTF015P02TL ROHM

RTF015P02TL electronic component of ROHM
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See Product Specifications
Part No.RTF015P02TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET P-CH 20V 1.5A TUMT3
Datasheet: RTF015P02TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2563 ea
Line Total: USD 768.9 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8216
10 : USD 0.7026
100 : USD 0.5383
500 : USD 0.4255
1000 : USD 0.3404

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2563
6000 : USD 0.253

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RTF015P02TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTF015P02TL and other electronic components in the MOSFETs category and beyond.

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RTF015P02 Transistors 2.5V Drive Pch MOSFET RTF015P02 z Dimensions (Unit : mm) z Structure Silicon P-channel TUMT3 MOSFET z Features 1) Low on-resistance. (180m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate 4) Low voltage drive. (2.5V) (2) Source Abbreviated symbol : WV (3) Drain z Applications DC-DC converter z Packaging specifications z Equivalent circuit Package Taping (3) Type Code TL 3000 Basic ordering unit (pieces) RTF015P02 (1) 2 1 (2) (1) Gate (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage V 12 V GSS Continuous ID 1.5 A Drain current 1 Pulsed IDP 6 A 1 Source current Continuous IS 0.6 A (Body diode) Pulsed I 6 A SP 2 Total power dissipation PD 0.8 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 156 C / W Mounted on a ceramic board. Rev.B 1/4 0.2Max.RTF015P02 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V 20 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 20V, VGS=0V Gate threshold voltage VGS (th) 0.7 2.0 V VDS= 10V, ID= 1mA 100 135 m I = 1.5A, V = 4.5V D GS Static drain-source on-state RDS (on) 110 150 m ID= 1.5A, VGS= 4V resistance 180 250 m ID= 0.8A, VGS= 2.5V Forward transfer admittance Yfs 1.5 SVDS= 10V, ID= 0.8A Input capacitance C 560 pF V = 10V iss DS Output capacitance Coss 90 pF VGS=0V Reverse transfer capacitance Crss 55 pF f=1MHz Turn-on delay time t 12 ns ID= 0.8A d (on) VDD 15V Rise time tr 12 ns VGS= 4.5V Turn-off delay time td (off) 38 ns RL=19 Fall time tf 12 ns RG=10 Total gate charge Q 5.2 nC V 15V RL=10 g DD Gate-source charge Qgs 1.3 nC VGS= 4.5V RG=10 Gate-drain charge Qgd1.4 nC ID= 1.5A Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Forward voltage VSD 1.2 V IS= 0.6A, VGS=0V Rev.B 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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