X-On Electronics has gained recognition as a prominent supplier of SCT30N120 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT30N120 SiC MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT30N120 STMicroelectronics

SCT30N120 electronic component of STMicroelectronics
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Part No.SCT30N120
Manufacturer: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs 1200V silicon carbide MOSFET
Datasheet: SCT30N120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 38.22 ea
Line Total: USD 38.22 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1

 SCT30N120 More Buying Options & Price Grid(s)

Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 600
Multiples : 600
600 : USD 22.191
3000 : USD 22.035
6000 : USD 21.879
9000 : USD 21.723
12000 : USD 21.554
15000 : USD 21.398
24000 : USD 21.229
30000 : USD 21.073
45000 : USD 20.904
75000 : USD 20.735

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 28.212
10 : USD 25.0933
100 : USD 22.4276

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 22.6233
5 : USD 21.7854
20 : USD 20.9475
50 : USD 20.9475
125 : USD 20.9475

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 21.1887
10 : USD 19.5421
25 : USD 18.6618
100 : USD 16.6941
600 : USD 16.5699

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 38.22
2 : USD 36.14
30 : USD 36.101

Specifications

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT30N120 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT30N120 and other electronic components in the SiC MOSFETs category and beyond.

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Additional Infomation About Product

The SCT30N120 is a high voltage Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. It is a 30A IGBT, with an enhanced CEO buffer structure and an operating voltage of up to 1200V. This makes it suited for applications such as motor drive, welding, and UPS power supply. The device has an improved dv/dt capability for surge current applications, and low collector-emitter saturation voltage for improved efficiency. The significantly improved turn-off performance of the integrated MOSFET can reduce switching losses, making the SCT30N120 ideal for power conversion applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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