SCT20N120 STMicroelectronics

SCT20N120 Datasheet Silicon carbide Power MOSFET 1200 V, 20 A, 189 m (typ., T = 150 C) in an HiP247 package J Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (T = 200 C) J Very fast and robust intrinsic body diode Low capacitance 3 2 1 Applications HiP247 Solar inverters, UPS Motor drives D(2, TAB) High voltage DC-DC converters Switch mode power supplies G(1) Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per S(3) unit area and very good switching performance almost independent of temperature. AM01475v1 noZen The outstanding thermal properties of the SiC material, combined with the devices housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120 Product summary Order code SCT20N120 Marking SCT20N120 Package HiP247 Packing Tube DS10360 - Rev 5 - September 2019 www.st.com For further information contact your local STMicroelectronics sales office.SCT20N120 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1200 V DS V Gate-source voltage -10 to 25 V GS I Drain current (continuous) at T = 25 C 20 A D C I Drain current (continuous) at T = 100 C 16 A D C (1) I Drain current (pulsed) 45 A DM P Total power dissipation at T = 25 C 175 W TOT C T Storage temperature range C stg -55 to 200 T Operating junction temperature range C j 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 1 C/W R Thermal resistance junction-ambient 40 C/W thj-amb DS10360 - Rev 5 page 2/13