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X-On Electronics has gained recognition as a prominent supplier of SCT2280KEC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT2280KEC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SCT2280KEC ROHM

SCT2280KEC electronic component of ROHM
SCT2280KEC ROHM
SCT2280KEC MOSFETs
SCT2280KEC  Semiconductors

Images are for reference only
See Product Specifications
Part No. SCT2280KEC
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET MOSFET SiC FET 1200V 14A 280mOhm
Datasheet: SCT2280KEC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 12.8919
10 : USD 11.2324
100 : USD 9.299
500 : USD 8.0974
1000 : USD 7.1239
N/A

Obsolete
0
MOQ : 30
Multiples : 30
30 : USD 6.5013
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 9.7542
10 : USD 8.5071
25 : USD 7.7945
100 : USD 7.2822
250 : USD 6.937
360 : USD 6.5918
1080 : USD 6.102
2520 : USD 5.9795
5040 : USD 5.857
N/A

Obsolete
0
MOQ : 3
Multiples : 3
3 : USD 8.1485
N/A

Obsolete
0
MOQ : 4
Multiples : 4
4 : USD 8.983
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
 
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We are delighted to provide the SCT2280KEC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT2280KEC and other electronic components in the MOSFETs category and beyond.

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SCT2280KE Datasheet N-channel SiC power MOSFET lOutline TO-247 V 1200V DSS TO-247N R (Typ.) 280m DS(on) I 14A D (3) P (2) 108W (1) D lInner circuit lFeatures (1) Gate 1) Low on-resistance (2) Drain 2) Fast switching speed (3) Source 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel *1 5) Simple to drive lPackaging specifications TO-247 TO-247N 6) Pb-free lead plating RoHS compliant Package Packing Tube Reel size (mm) - lApplication Tape width (mm) - Solar inverters Type Basic ordering unit (pcs) 30 DC/DC converters Packing code C C11 Induction heating Marking SCT2280KE Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 1200 V DSS *2 T = 25C 14 A I c D Continuous drain current *2 T = 100C I 10 A c D *3 Pulsed drain current 35 A I D,pulse V Gate - Source voltage (DC) -6 to 22 V GSS *4 Gate - Source surge voltage (T 300nsec) V -10 to 26 V surge GSS-surge Power dissipation (T = 25C) P 108 W c D T Junction temperature 175 C j Range of storage temperature T C -55 to +175 stg www.rohm.com TSQ50210-SCT2280KE 2019 ROHM Co., Ltd. All rights reserved. 1/12 22.Feb.2019 - Rev.002 TSZ2211114001Datasheet SCT2280KE lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 A DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS+ GS DS I V = -6V, V = 0V Gate - Source leakage current - - -100 nA GSS- GS DS Gate threshold voltage V V = V , I = 1.4mA 1.6 2.8 4.0 V GS (th) DS GS D lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 1.07 1.39 C/W thJC R Thermal resistance, junction - ambient - - 50 C/W thJA Soldering temperature, wavesoldering for 10s T - - 265 C sold lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R 1.00E-01 C 8.61E-04 th1 th1 K/W Ws/K R C 6.62E-01 2.84E-03 th2 th2 R C 3.04E-01 5.59E-02 th3 th3 www.rohm.com TSQ50210-SCT2280KE 2019 ROHM Co., Ltd. All rights reserved. 2/12 22.Feb.2019 - Rev.002 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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