X-On Electronics has gained recognition as a prominent supplier of SN7002NH6327XTSA2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SN7002NH6327XTSA2 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SN7002NH6327XTSA2 Infineon

SN7002NH6327XTSA2 electronic component of Infineon
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Part No.SN7002NH6327XTSA2
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 60V 200mA SOT-23-3
Datasheet: SN7002NH6327XTSA2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1851 ea
Line Total: USD 0.19 
Availability - 49892
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0419
9000 : USD 0.0419
15000 : USD 0.0419
30000 : USD 0.0419
60000 : USD 0.0419

84
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 5
Multiples : 5
5 : USD 0.0672
50 : USD 0.0657
150 : USD 0.0648
500 : USD 0.064

49892
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1851
10 : USD 0.1242
100 : USD 0.0655
1000 : USD 0.0598
3000 : USD 0.0471
9000 : USD 0.0414
24000 : USD 0.0414
99000 : USD 0.038

51346
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 184
Multiples : 1
184 : USD 0.221
200 : USD 0.2047
500 : USD 0.102
1000 : USD 0.0875
2000 : USD 0.0829
3000 : USD 0.0775
6000 : USD 0.0706
12000 : USD 0.0662
24000 : USD 0.0603

32010
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0555
9000 : USD 0.0473
24000 : USD 0.0443
99000 : USD 0.0411

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SN7002NH6327XTSA2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SN7002NH6327XTSA2 and other electronic components in the MOSFETs category and beyond.

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SN7002N SIPMOS Small-Signal-Transistor Product Summary Feature V 60 V DS N-Channel R 5 DS(on) Enhancement mode I 0.2 A D Logic Level PG-SOT-23 dv/dt rated Drain pin 3 Qualified according to AEC Q101 Gate pin1 Halogen-free according to IEC61249-2-21 Source pin 2 Type Package Pb-free Tape and Reel Information Marking PG-SOT-23 SN7002N Yes H6327: 3000 pcs/reel sSN Yes SN7002N PG-SOT-23 H6433: 10000 pcs/reel sSN Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 0.2 A T =70C 0.16 A 0.8 Pulsed drain current I D puls T =25C A Reverse diode dv/dt dv/dt 6 kV/s I =0.2A, V =48V, di/dt=200A/s, T =150C S DS jmax V Gate source voltage V 20 GS ESD Class (JESD22-A114-HBM) 0 (<250V) 0.36 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev. 2.6 Page 1 2011-07-11SN7002N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 350 K/W Thermal resistance, junction - ambient R thJA at minimal footprint Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics 60 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =250A GS D 0.8 1.4 1.8 Gate threshold voltage, V = V V GS DS GS(th) I =26A D A Zero gate voltage drain current I DSS V =60V, V =0, T =25C - - 0.1 DS GS j V =60V, V =0, T =150C - - 5 DS GS j - - 10 nA Gate-source leakage current I GSS V =20V, V =0 GS DS - 3.9 7.5 Drain-source on-state resistance R DS(on) V =4.5V, I =0.17A GS D - 2.5 5 Drain-source on-state resistance R DS(on) V =10V, I =0.5A GS D Rev. 2.6 Page 2 2011-07-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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