X-On Electronics has gained recognition as a prominent supplier of SCT2080KEC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT2080KEC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SCT2080KEC ROHM

SCT2080KEC electronic component of ROHM
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Part No.SCT2080KEC
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET SiC N-Ch MOSFET wout SBD 18V
Datasheet: SCT2080KEC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 8.9426 ea
Line Total: USD 80.48 
Availability - 0
MOQ: 9  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 360
1 : USD 22.7163
100 : USD 18.4057

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 29.988
10 : USD 26.6673
100 : USD 22.7721
500 : USD 20.6746

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2
Multiples : 1
2 : USD 21.0465
5 : USD 20.267
25 : USD 19.4875
50 : USD 19.4875
150 : USD 19.4875

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 360
Multiples : 360
360 : USD 18.6134

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 24.2568
10 : USD 22.464
25 : USD 20.4876
100 : USD 18.9432
250 : USD 17.6796

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 9
Multiples : 1
9 : USD 8.9426

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 30
Multiples : 30
30 : USD 19.125

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 4
Multiples : 1
4 : USD 28.3812

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 4
Multiples : 1
4 : USD 33.7144

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT2080KEC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT2080KEC and other electronic components in the MOSFETs category and beyond.

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SCT2080KE N-channel SiC power MOSFET Datasheet lOutline TO-247 V 1200V DSS TO-247N R (Typ.) 80m DS(on) I 40A D lFeatures lInner circuit 1) Low on-resistance (1) Gate 2) Fast switching speed (2) Drain 3) Fast reverse recovery (3) Source 4) Easy to parallel * Body Diode 5) Simple to drive *1 6) Pb-free lead plating RoHS compliant lPackaging specifications TO-247 TO-247N Package Packing Tube lApplication Reel size (mm) - Solar inverters Tape width (mm) - DC/DC converters Type Basic ordering unit (pcs) 30 Induction heating Packing code C C11 Motor drives Marking SCT2080KE lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 1200 V DSS *2 T = 25C I 40 A c D Continuous drain current *2 T = 100C I 28 A c D *3 Pulsed drain current I 80 A D,pulse Gate - Source voltage (DC) V V -6 to +22 GSS *4 Gate - Source surge voltage ( 300nsec) V V -10 to +26 surge GSS surge T =25C, See Fig.1 262 W C P Total power dissipation D T =100C, See Fig.1 130 W C T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50210-SCT2080KE 2019 ROHM Co., Ltd. All rights reserved. 1/12 28.Mar.2019 - rev.004 TSZ2211114001SCT2080KE Datasheet lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 A DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -6V, V = 0V - - -100 nA GSS - GS DS V V = V , I = 4.4mA Gate threshold voltage 1.6 2.8 4.0 V GS (th) DS GS D lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.44 0.57 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R 7.80E-02 C 5.00E-03 th1 th1 R 1.97E-01 K/W C 1.80E-02 Ws/K th2 th2 R 1.62E-01 C 2.49E-01 th3 th3 www.rohm.com TSQ50210-SCT2080KE 2019 ROHM Co., Ltd. All rights reserved. 2/12 28.Mar.2019 - rev.004 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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