SCT2080KEHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline TO-247N V 1200V DSS R (Typ.) 80m DS(on) I 40A D lFeatures lInner circuit 1) Low on-resistance (1) Gate 2) Fast switching speed (2) Drain 3) Fast reverse recovery (3) Source 4) Easy to parallel * Body Diode 5) Simple to drive 6) Pb-free lead plating RoHS compliant lPackaging specifications TO-247N 7) Qualified to AEC-Q101 Package Packing Tube lApplication Reel size (mm) - Automobile Tape width (mm) - Switch mode power supplies Type Basic ordering unit (pcs) 30 Packing code C11 Marking SCT2080KE lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 1200 V DSS *1 T = 25C I 40 A c D Continuous drain current *1 T = 100C I 28 A c D *2 Pulsed drain current I 80 A D,pulse Gate - Source voltage (DC) V V -6 to +22 GSS *3 Gate - Source surge voltage ( 300nsec) V V -10 to +26 surge GSS surge T =25C, See Fig.1 262 W C P Total power dissipation D T =100C, See Fig.1 130 W C T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50211-SCT2080KEHR 2019 ROHM Co., Ltd. All rights reserved. 1/12 28.Mar.2019 - Rev.002 TSZ2211114001SCT2080KEHR Datasheet lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 A DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -6V, V = 0V - - -100 nA GSS - GS DS V V = V , I = 4.4mA Gate threshold voltage 1.6 2.8 4.0 V GS (th) DS GS D lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.44 0.57 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R 7.80E-02 C 5.00E-03 th1 th1 R 1.97E-01 K/W C 1.80E-02 Ws/K th2 th2 R 1.62E-01 C 2.49E-01 th3 th3 TSQ50211-SCT2080KEHR www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/12 28.Mar.2019 - Rev.002 TSZ2211115001