RS1L180GN Datasheet Nch 60V 68A Power MOSFET llOutline V 60V DSS R (Max.) 5.6m DS(on) HSOP8 I 68A D P 39W D llInner circuit llFeatures 1) Low on - resistance 2) High power package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested 6) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RS1L180GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS *1 T = 25C I 68 A c D Continuous drain current T = 25C I 18 A a D *2 I Pulsed drain current 72 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 18 A AS *3 E Avalanche energy, single pulse 50 mJ AS *1 P 39 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.005 RS1L180GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 3.2 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = V , I = 100A 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -5.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 18A - 4.2 5.6 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 18A - 5.9 8.5 GS D R Gate resistance f=1MHz, open drain - 1.5 - G Forward Transfer *5 Y V = 5V, I = 18A 25 - - S fs DS D Admittance *1T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.2mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.005 2019 ROHM Co., Ltd. All rights reserved.