R6020PNJ Datasheet Nch 600V 20A Power MOSFET llOutline TO-263S V 600V DSS SC-83 R (Max.) 0.25 DS(on) LPT(S) I 20A D P 304W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V ) guaranteed to GSS be 30V. 4) Parallel use is easy. 5) Pb-free plating RoHS compliant 6) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Power Supply Quantity (pcs) 1000 Taping code TL Marking R6020PNJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 Continuous drain current (T = 25C) I 20 A c D *2 I Pulsed drain current 80 A DP Gate - Source voltage V 30 V GSS *3 Avalanche current, single pulse I 10 A AS *3 E Avalanche energy, single pulse 26.7 mJ AS Power dissipation (T = 25C) P 304 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.004 R6020PNJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 0.41 /W thJC *5 R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - - j I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2.5 - 4.5 V GS(th) DS D V = 10V, I = 10A GS D Static drain - source *6 R T = 25C - 0.19 0.25 DS(on) j on - state resistance T = 125C - 0.37 - j Gate resistance R f = 1MHz, open drain - 13.4 - G www.rohm.com 2/11 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.